SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon PNP Power Transistors
2SB762 2SB762A
DESCRI...
SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon
PNP Power
Transistors
2SB762 2SB762A
DESCRIPTION ·With TO-220C package ·Complement to type 2SD857/857A ·Low collector saturation voltage APPLICATIONS ·For audio frequency power amplifier applications
PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base
Absolute maximum ratings(Tc=25 )
SYMBOL PARAMETER 2SB762 VCBO Collector-base voltage 2SB762A 2SB762 VCEO Collector-emitter voltage 2SB762A VEBO IC ICM PC Tj Tstg Emitter-base voltage Collector current Collector current-peak Collectorl power dissipation Junction temperature Storage temperature TC=25 Open collector Open base -80 -5 -4 -8 40 150 -55~150 V A A W Open emitter -80 -60 V CONDITIONS VALUE -60 V UNIT
SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon
PNP Power
Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER 2SB762 IC=-30mA; IB=0 2SB762A IC=-4A;IB=-0.4 A IC=-3A ; VCE=-4V 2SB762 2SB762A 2SB762 2SB762A VCE=-60V; VBE=0 CONDITIONS SYMBOL
2SB762 2SB762A
MIN -60
TYP.
MAX
UNIT
VCEO
Collector-emitter breakdown voltage
V -80 -1.5 -2.0 V V
VCEsat VBE
Collector-emitter saturation voltage Base-emitter on voltage
ICES
Collector cut-off current
-400 VCE=-80V; VBE=0 VCE=-30V; IB=0 -700 VCE=-60V; IB=0 VEB=-5V; IC=0 IC=-1A ; VCE=-4V IC=-3A ; VCE=-4V 40 15 -7 250
µA
ICEO
Collector cut-off current
µA
IEBO hFE-1 hFE-2
Emitter cut-off current DC current gain DC current gai...