SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon PNP Power Transistors
DESCRIPTION ·With TO-12...
SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon
PNP Power
Transistors
DESCRIPTION ·With TO-126 package ·DARLINGTON ·High DC current gain ·Low collector saturation voltage ·Complement to type 2SD985 2SD986 APPLICATIONS ·For use in operating from IC without predriver ,such as hammer driver
PINNING(See Fig.2) PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base
2SB794 2SB795
Absolute maximum ratings(Ta=25 )
SYMBOL PARAMETER 2SB794 VCBO Collector-base voltage 2SB795 2SB794 VCEO Collector-emitter voltage 2SB795 VEBO IC ICM Emitter-base voltage Collector current (DC) Collector current-peak Ta=25 PD Total power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 10 150 -55~150 Open collector Open base -80 -8 -1.5 -3.0 1.0 W V A A Open emitter -80 -60 V CONDITIONS VALUE -60 V UNIT
SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon
PNP Power
Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER 2SB794 IC=-10mA ;IB=0 2SB795 VCEsat VBEsat Collector-emitter saturation voltage Base-emitter saturation voltage 2SB794 2SB795 IEBO hFE-1 hFE-2 Emitter cut-off current DC current gain DC current gain IC=-1A ;IB=-1mA IC=-1A ;IB=-1mA VCB=-60V; IE=0 -80 CONDITIONS
2SB794 2SB795
SYMBOL
MIN -60
TYP.
MAX
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
V
-1.5 -2.0
V V
ICBO
Collector cut-off current
-1.0 VCB=-80V; IE=0 VEB=-5V; IC=0 IC=-0.5A ; VCE=-2V IC=-1A ; VCE=-2V 1000 2000 30000 ...