2SB859

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SB859 · DESCRIPTION ·With TO-220C package ·Complement to type 2SD1135 APPLICATIONS ·Low frequency power amplifier PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings(Tc=25 ) SYMBOL VCBO VCEO VEBO IC ICP PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -100 -80 -5 -4 -8 40 150 -45~150 UNIT V V V A A W SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SB859 CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown votage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current DC current gain DC current gain Collector output capacitance Transition frequency CONDITIONS IC=-50mA; RBE=8 IE=-10µA; IC=0 IC=-2 A;IB=-0.2 A IC=-1A ; VCE=-5V VCB=-80V; IE=0 IC=-1A ; VCE=-5V IC=-0.1A ; VCE=-5V IC=0; VCB=-20V;f=1MHz IC=-0.5A ; VCE=-5V 60 35 75 20 pF MHz MIN -80 -5 -2.0 -1.5 -0.1 200 TYP. MAX UNIT V V V V mA SYMBOL V(BR)CEO V(BR)EBO VCEsat VBE ICBO hFE-1 hFE-2 Cob fT hFE-1 classifications B 60-120 C 100-200 2 SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Powe...