2SB884

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistor 2SB884 DESCRIPTION ·With TO-220C package ·DARLINGTON ·High DC durrent gain ·Low collector saturation voltage ·Complement to type 2SD1194 APPLICATIONS ·For motor drivers,printer hammer drivers,relay drivers,voltage regulator control applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Tc=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current-DC Collector current-Pulse TC=25 PC Collector power dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 1.75 150 -55~150 Open emitter Open base Open collector CONDITIONS VALUE -110 -100 -6 -3 -5 30 W UNIT V V V A A SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistor CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=-50mA, RBE=? IC=-5mA, IE=0 IC=-1.5A ,IB=-3mA IC=-1.5A ,IB=-3mA VCB=-80V, IE=0 VEB=-5V; IC=0 IC=-1.5A ; VCE=-3V VCE=-5V, IC=-1.5A 1500 20 MIN -100 -110 -1.0 2SB884 SYMBOL V(BR)CEO V(BR)CBO VCEsat VBE sat ICBO IEBO hFE fT TYP. MAX UNIT V V -1.5 -2.0 -0.1 -3.0 V V mA mA MHz Switching ...