MOSFET Transistor. 8N60 Datasheet

8N60 Transistor. Datasheet pdf. Equivalent

Part 8N60
Description N-Channel MOSFET Transistor
Feature INCHANGE Semiconductor www.DataSheet4U.com isc N-Channel Mosfet Transistor isc Product Specificatio.
Manufacture Inchange
Datasheet
Download 8N60 Datasheet

INCHANGE Semiconductor www.DataSheet4U.com isc N-Channel Mos 8N60 Datasheet
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Recommendation Recommendation Datasheet 8N60 Datasheet




8N60
INCHANGE Semiconductor
iwswwc.DaNtaS-hCeeth4Ua.conmnel Mosfet Transistor
isc Product Specification
8N60
·FEATURES
·Drain Current ID= 7.5A@ TC=25
·Drain Source Voltage-
: VDSS= 600V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 1.2Ω(Max)
·Avalanche Energy Specified
·Fast Switching
·Simple Drive Requirements
·DESCRITION
·Designed for high efficiency switch mode power supply.
·ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
VGS
Drain-Source Voltage
Gate-Source Voltage-Continuous
600
±20
V
V
ID Drain Current-Continuous
7.5 A
IDM Drain Current-Single Plused
30 A
PD Total Dissipation @TC=25
147 W
Tj Max. Operating Junction Temperature 150
Tstg Storage Temperature
-55~150
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
0.85 /W
62.5 /W
isc Websitewww.iscsemi.cn



8N60
INCHANGE Semiconductor
iwswwc.DaNtaS-hCeet4hU.acomnnel Mosfet Transistor
isc Product Specification
8N60
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 0.25mA
VGS(th) Gate Threshold Voltage
RDS(on) Drain-Source On-Resistance
IGSS Gate-Body Leakage Current
VDS= VGS; ID= 0.25mA
VGS= 10V; ID= 3.75A
VGS= ±20V; VDS= 0
IDSS Zero Gate Voltage Drain Current
VSD Forward On-Voltage
VDS= 600V; VGS= 0
IS= 7.5A; VGS= 0
MIN MAX UNIT
600 V
24V
1.2 Ω
±100 nA
1 μA
1.4 V
·
isc Websitewww.iscsemi.cn





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