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GE5N20V. 5N20V Datasheet |
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GEMOS
www.DataSheet4U.com
MOS FIELD EFFECT TRANSISTOR
GE5N20V
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
DESCRIPTION
The GE5N20V uses advanced trench technology to provide
excellent RDS(ON), rugged avalanche characteristics and less
critical alignment steps therefore a remarkable manufacturing
reproducibility. This device is suitable for use as a Battery
protection or in other Switching application.
Schematic diagram
GENERAL FEATURES
● VDS = 20V,ID = 5A
RDS(ON) < 36mΩ @ VGS=2.7V
RDS(ON) < 27.5mΩ @ VGS=4.5V
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package
Marking and pin Assignment
APPLICATIONS
● Battery protection
● Load switch
● Power management
TSSOP-8 top view
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Package
Reel Size
5N20V
GE5N20V
TSSOP-8
Ø330mm
Tape width
12mm
ABSOLUTE MAXIMUM RATLNGS(TA=25℃unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous @ Current-Pulsed
(Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
PD
TJ，TSTG
Limit
20
±12
5
20
1.5
-55 to 150
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient
(Note 2)
RθJA
83
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
Zero Gate Voltage Drain Current
IDSS
Gate-Body Leakage Current
IGSS
ON CHARACTERISTICS
Gate Threshold Voltage
(Note 3)
VGS(th)
Drain-Source On-State Resistance RDS(ON)
Forward Transconductance
gFS
Condition
VGS=0V,ID=250µA
VDS=18V,VGS=0V
VGS=±12V,VDS=0V
VDS=VGS,,ID=250µA
VGS=4.5V, ID=2.5A
VGS=2.7V, ID=2.5A
VDS=15V, ID=2.5A
Min
20
0.6
Typ
21
26
9.5
Max
1
±100
27.5
36
Quantity
3000 units
Unit
V
V
A
A
W
℃
℃/W
Unit
V
µA
nA
V
mΩ
mΩ
S
捷拓科技有限公司
地 址：廣東省深圳市福田區南園路 68 号上步大廈 18 樓 I-L 室
電 話：0755-83661391
郵政編碼：518031
傳 真：0755-83661909
公司網站：www.gemostech.com
GEMOS(SHEN ZHEN) TECHNOLOGY LIMITED COMPANY
ADD:Room I-L,18F,Shangbu Bldg.,NO.68 Nanyuan Road, Futian District,Shenzhen China.
Tel:0755-83661391
Fax:0755-83661909
Postcode:518031
Website:www.gemostech.com
© GEMOS TECH CO., LTD. 2007
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GEMOS
DYNAMIC CHARACTERISTICS
InpuwtwCwa.DpaatcaiStahneceet4U.com
(Note 4)
Clss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
SWITCHING CHARACTERISTICS (Note 4)
Turn-on Delay Time
td(on)
Turn-on Rise Time
tr
Turn-Off Delay Time
td(off)
Turn-Off Fall Time
tf
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 3)
VSD
Diode Forward Current
IS
VDS=15V,VGS=0V,
F=1.0MHz
VDD=10V,ID=2.5A
VGS=4.5V,
RGEN=4.7Ω
VDS=10V,ID=4.5A,
VGS=4.5V
VGS=0V,IS=5A
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. When Mounted on minimum recommended footprint.
3. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 1.5%.
4. Guaranteed by design, not subject to production testing.
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
460
200
50
7
33
27
10
8.5
1.8
2.4
GE5N20V
PF
PF
PF
nS
nS
nS
nS
11.5 nC
nC
nC
1.2 V
5A
Figure 1: Switching Test Circuit
Figure 2: Switching Waveforms
©GEMOS TECH CO.,LTD.
Figure 3: Normalized Maximum Transient Thermal Impedance
2006.9.6
Version:1.1
Page 2 of 4
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GEMOS
GE5N20V
www.DataSheet4U.com TSSOP-8 PACKAGE INFORMATION
Dimensions in Millimeters (UNIT: mm)
NOTES：
1. All dimensions are in millimeters.
2. Dimensions are inclusive of plating
3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils.
4. Dimension L is measured in gauge plane.
5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.
©GEMOS TECH CO.,LTD.
2006.9.6
Version:1.1
Page 3 of 4
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