GE5N20V. 5N20V Datasheet

5N20V GE5N20V. Datasheet pdf. Equivalent


Gemos 5N20V
GEMOS
www.DataSheet4U.com
MOS FIELD EFFECT TRANSISTOR
GE5N20V
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
DESCRIPTION
The GE5N20V uses advanced trench technology to provide
excellent RDS(ON), rugged avalanche characteristics and less
critical alignment steps therefore a remarkable manufacturing
reproducibility. This device is suitable for use as a Battery
protection or in other Switching application.
Schematic diagram
GENERAL FEATURES
VDS = 20V,ID = 5A
RDS(ON) < 36m@ VGS=2.7V
RDS(ON) < 27.5m@ VGS=4.5V
High Power and current handing capability
Lead free product is acquired
Surface Mount Package
Marking and pin Assignment
APPLICATIONS
Battery protection
Load switch
Power management
TSSOP-8 top view
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Package
Reel Size
5N20V
GE5N20V
TSSOP-8
Ø330mm
Tape width
12mm
ABSOLUTE MAXIMUM RATLNGS(TA=25unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous @ Current-Pulsed
(Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
PD
TJTSTG
Limit
20
±12
5
20
1.5
-55 to 150
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient
(Note 2)
RθJA
83
ELECTRICAL CHARACTERISTICS (TA=25unless otherwise noted)
Parameter
Symbol
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
Zero Gate Voltage Drain Current
IDSS
Gate-Body Leakage Current
IGSS
ON CHARACTERISTICS
Gate Threshold Voltage
(Note 3)
VGS(th)
Drain-Source On-State Resistance RDS(ON)
Forward Transconductance
gFS
Condition
VGS=0V,ID=250µA
VDS=18V,VGS=0V
VGS=±12V,VDS=0V
VDS=VGS,,ID=250µA
VGS=4.5V, ID=2.5A
VGS=2.7V, ID=2.5A
VDS=15V, ID=2.5A
Min
20
0.6
Typ
21
26
9.5
Max
1
±100
27.5
36
Quantity
3000 units
Unit
V
V
A
A
W
/W
Unit
V
µA
nA
V
m
m
S
捷拓科技有限公司
地 址:廣東省深圳市福田區南園路 68 号上步大廈 18 樓 I-L 室
電 話:0755-83661391
郵政編碼:518031
傳 真:0755-83661909
公司網站:www.gemostech.com
GEMOS(SHEN ZHEN) TECHNOLOGY LIMITED COMPANY
ADD:Room I-L,18F,Shangbu Bldg.,NO.68 Nanyuan Road, Futian District,Shenzhen China.
Tel:0755-83661391
Fax:0755-83661909
Postcode:518031
Website:www.gemostech.com
© GEMOS TECH CO., LTD. 2007


5N20V Datasheet
Recommendation 5N20V Datasheet
Part 5N20V
Description GE5N20V
Feature 5N20V; GEMOS www.DataSheet4U.com MOS FIELD EFFECT TRANSISTOR GE5N20V N-CHANNEL MOS FIELD EFFECT TRANSIST.
Manufacture Gemos
Datasheet
Download 5N20V Datasheet




Gemos 5N20V
GEMOS
DYNAMIC CHARACTERISTICS
InpuwtwCwa.DpaatcaiStahneceet4U.com
(Note 4)
Clss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
SWITCHING CHARACTERISTICS (Note 4)
Turn-on Delay Time
td(on)
Turn-on Rise Time
tr
Turn-Off Delay Time
td(off)
Turn-Off Fall Time
tf
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 3)
VSD
Diode Forward Current
IS
VDS=15V,VGS=0V,
F=1.0MHz
VDD=10V,ID=2.5A
VGS=4.5V,
RGEN=4.7
VDS=10V,ID=4.5A,
VGS=4.5V
VGS=0V,IS=5A
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. When Mounted on minimum recommended footprint.
3. Pulse Test: Pulse Width 300µs, Duty Cycle 1.5%.
4. Guaranteed by design, not subject to production testing.
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
460
200
50
7
33
27
10
8.5
1.8
2.4
GE5N20V
PF
PF
PF
nS
nS
nS
nS
11.5 nC
nC
nC
1.2 V
5A
Figure 1: Switching Test Circuit
Figure 2: Switching Waveforms
©GEMOS TECH CO.,LTD.
Figure 3: Normalized Maximum Transient Thermal Impedance
2006.9.6
Version:1.1
Page 2 of 4



Gemos 5N20V
GEMOS
GE5N20V
www.DataSheet4U.com TSSOP-8 PACKAGE INFORMATION
Dimensions in Millimeters (UNIT: mm)
NOTES
1. All dimensions are in millimeters.
2. Dimensions are inclusive of plating
3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils.
4. Dimension L is measured in gauge plane.
5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.
©GEMOS TECH CO.,LTD.
2006.9.6
Version:1.1
Page 3 of 4







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