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5N20V Datasheet, Equivalent, GE5N20V.GE5N20V GE5N20V |
| Part | 5N20V |
|---|---|
| Description | GE5N20V |
| Feature | GEMOS www.DataSheet4U.com MOS FIELD EFFECT TRANSISTOR GE5N20V N-CHANNEL MOS FIELD EFFECT TRANSISTOR DESCRIPTION The GE5N20V uses advanced trench technology to provide excellent RDS(ON), rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. This device is suitable for use as a Battery protection or in other Switching application. Schematic diagram GENERAL FEATURES RDS(ON) < 36mΩ @ VGS=2.7V RDS(ON) < 27.5mΩ @ VGS=4.5V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package ● VDS = . |
| Manufacture | Gemos |
| Datasheet |
| Part | 5N20V |
|---|---|
| Description | GE5N20V |
| Feature | GEMOS www.DataSheet4U.com MOS FIELD EFFECT TRANSISTOR GE5N20V N-CHANNEL MOS FIELD EFFECT TRANSISTOR DESCRIPTION The GE5N20V uses advanced trench technology to provide excellent RDS(ON), rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. This device is suitable for use as a Battery protection or in other Switching application. Schematic diagram GENERAL FEATURES RDS(ON) < 36mΩ @ VGS=2.7V RDS(ON) < 27.5mΩ @ VGS=4.5V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package ● VDS = . |
| Manufacture | Gemos |
| Datasheet |
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