SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon PNP Power Transistors
DESCRIPTION ·With TO-12...
SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon
PNP Power
Transistors
DESCRIPTION ·With TO-126 package ·Complement to type 2SD1563 ·Low collector saturation voltage ·Large current capability APPLICATIONS ·Designed for use in low frequency power amplifier applications
PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base
2SB1086
Absolute maximum ratings(Ta=25 )
SYMBOL VCBO VCEO VEBO IC ICM PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current -peak Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -120 -120 -5 -1.5 -3.0 10 150 -55~150 UNIT V V V A A W
SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon
PNP Power
Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN
2SB1086
SYMBOL
TYP.
MAX
UNIT
V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE fT COB
Collector-emitter breakdown voltage
IC=-1mA ;IB=0 IC=-50µA ;IE=0 IE=-50µA ;IC=0 IC=-1.0A ;IB=-0.1A IC=-1.0A ;IB=-0.1A VCB=-100V; IE=0 VEB=-4V; IC=0 IC=-0.1A ; VCE=-5V IC=-0.1A ; VCE=-5V IE=0 ; VCB=-10V;f=1MHz
-120
V
Collector-base breakdown voltage
-120
V
Emitter-base breakdown voltage
-5
V
Collector-emitter saturation voltage
-2.0
V
Base-emitter saturation voltage
-1.5
V
Collector cut-off current
-1.0
µA
Emitter cut-off current
-1.0
µA
D...