POWER TRANSISTOR. 2SB1087 Datasheet

2SB1087 TRANSISTOR. Datasheet pdf. Equivalent


SavantIC 2SB1087
SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
DESCRIPTION
·With TO-220C package
·High DC current gain
·DARLINGTON
APPLICATIONS
·For low frequency power amplifier and low
speed power switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Product Specification
2SB1087
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current-DC
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
Ta=25
TC=25
VALUE
-100
-100
-5
-5
1.5
30
150
-55~150
UNIT
V
V
V
A
W


2SB1087 Datasheet
Recommendation 2SB1087 Datasheet
Part 2SB1087
Description SILICON POWER TRANSISTOR
Feature 2SB1087; SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2S.
Manufacture SavantIC
Datasheet
Download 2SB1087 Datasheet




SavantIC 2SB1087
SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-30mA, IB=0
VCEsat Collector-emitter saturation voltage IC=-2A ,IB=-2mA
VBEsat
Base-emitter saturation voltage
IC=-2A ,IB=-2mA
ICBO Collector cut-off current
VCB=-100V, IE=0
IEBO Emitter cut-off current
VEB=-5V; IC=0
hFE-1
DC current gain
IC=-2A , VCE=-5V
hFE-2
DC current gain
IC=-5A , VCE=-5V
Product Specification
2SB1087
MIN TYP. MAX UNIT
-100
V
-1.5 V
-2.0 V
1 µA
-3 mA
2000
20000
500
2



SavantIC 2SB1087
SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
PACKAGE OUTLINE
Product Specification
2SB1087
Fig.2 Outline dimensions
3







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