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STTH112A

ST Microelectronics

HIGH VOLTAGE ULTRAFAST RECTIFIER

® STTH112/A/U HIGH VOLTAGE ULTRAFAST RECTIFIER MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) FEATURES AND...


ST Microelectronics

STTH112A

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® STTH112/A/U HIGH VOLTAGE ULTRAFAST RECTIFIER MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) FEATURES AND BENEFITS s s 1A 1200 V 175 °C 1.65 V s s s Low forward voltage drop High reliability High surge current capability Soft switching for reduced EMI disturbances Planar technology DO-41 STTH112 DESCRIPTION The STTH112, which is using ST ultrafast high voltage planar technology, is specially suited for free-wheeling, clamping, snubbering, demagnetization in power supplies and other power switching applications. ABSOLUTE RATINGS (limiting values) Symbol VRRM V(RMS) IF(AV) Parameter Repetitive peak reverse voltage RMS voltage Average forward current Tl = 85°C Tl = 115°C Tl = 125°C IFSM Forward surge current t = 8.3 ms SMA STTH112A SMB STTH112U Value 1200 850 δ =0.5 δ =0.5 δ =0.5 DO-41 SMA SMB DO-41 SMA SMB 20 18 1 Unit V V A A Tstg Tj Storage temperature range Maximum operating junction temperature - 50 + 175 + 175 °C °C January 2003 - Ed: 2 1/6 STTH112/A/U THERMAL PARAMETERS Symbol Rth (j-l) Junction to lead Parameter L = 10 mm DO-41 SMA SMB Rth (j-a) Junction to ambient L = 10 mm DO-41 Value 45 30 25 110 Unit °C/W STATIC ELECTRICAL CHARACTERISTICS Symbol IR Parameter Reverse leakage current Tests conditions VR = 1200V Tj = 25°C Tj = 125°C VF Forward voltage drop IF = 1 A Tj = 25°C Tj = 125°C To evaluate the maximum conduction losses use the following equation : P = 1.35 x IF(AV) + 0.3 x IF2(RMS) DYNAMIC ELECTRICAL CHARACTERISTICS Symbol trr ...




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