N-Channel MOSFET. 11N90C Datasheet

11N90C MOSFET. Datasheet pdf. Equivalent


Fairchild Semiconductor 11N90C
www.DataSheet4U.com
FQA11N90C
900V N-Channel MOSFET
Features
• 11A, 900V, RDS(on) = 1.1@VGS = 10 V
• Low gate charge ( typical 60 nC)
• Low Crss ( typical 23pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
September 2006
QFET ®
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies, active power factor
correction, electronic lamp ballast based on half bridge
topology.
D
G DS
TO-3P
FQA Series
G
S
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8 from case for 5 seconds
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
FQA11N90C
900
11.0
6.9
44.0
± 30
960
11.0
30
4.0
300
2.38
-55 to +150
300
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
Typ
--
0.24
--
Max
0.42
--
40
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
©2006 Fairchild Semiconductor Corporation
FQA11N90C Rev. A1
1
www.fairchildsemi.com


11N90C Datasheet
Recommendation 11N90C Datasheet
Part 11N90C
Description 900V N-Channel MOSFET
Feature 11N90C; FQA11N90C 900V N-Channel MOSFET www.DataSheet4U.com September 2006 QFET FQA11N90C 900V N-Channel .
Manufacture Fairchild Semiconductor
Datasheet
Download 11N90C Datasheet




Fairchild Semiconductor 11N90C
wwPwa.DcaktaaSgheeet4MU.acormking and Ordering Information
Device Marking Device
FQA11N90C
FQA11N90C
FQA11N90C
FQA11N90C_F109
Package
TO-3P
TO-3PN
Reel Size
--
--
Tape Width
--
--
Quantity
30
30
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Off Characteristics
BVDSS
BVDSS/
TJ
IDSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Zero Gate Voltage Drain Current
IGSSF
Gate-Body Leakage Current, Forward
IGSSR
Gate-Body Leakage Current, Reverse
On Characteristics
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VDS = 900 V, VGS = 0 V
VDS = 720 V, TC = 125°C
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
VGS(th)
Gate Threshold Voltage
RDS(on)
Static Drain-Source On-Resistance
gFS Forward Transconductance
Dynamic Characteristics
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 5.5 A
VDS = 50 V, ID = 5.5 A
(Note 4)
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
Switching Characteristics
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
td(on)
tr
Turn-On Delay Time
Turn-On Rise Time
VDD = 450 V, ID = 11.0A,
RG = 25
td(off)
tf
Turn-Off Delay Time
Turn-Off Fall Time
(Note 4, 5)
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS = 720 V, ID = 11.0A,
VGS = 10 V
(Note 4, 5)
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage
VGS = 0 V, IS =11.0 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 11.0 A,
dIF / dt = 100 A/µs
(Note 4)
900
--
--
--
--
--
3.0
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
NOTES:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 15mH, IAS =11.0A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD 11.0A, di/dt 200A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300µs, Duty cycle 2%
5. Essentially independent of operating temperature
Typ
--
1.02
--
--
--
--
--
1.12
9.0
2530
215
23
60
130
130
85
60
13
25
--
--
--
1000
17.0
Max Units
--
--
10
100
100
-100
V
V/°C
µA
µA
nA
nA
5.0 V
1.4
-- S
3290
280
30
pF
pF
pF
130 ns
270 ns
270 ns
180 ns
80 nC
-- nC
-- nC
11.0 A
44.0 A
1.4 V
-- ns
-- µC
FQA11N90C Rev. A1
2
www.fairchildsemi.com



Fairchild Semiconductor 11N90C
www.DataSheet4U.com
Typical Performance Characteristics
Figure 1. On-Region Characteristics
VGS
Top : 15.0 V
10.0 V
8.0 V
101 7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
100
Notes :
1. 250µ s Pulse Test
10-1 2. TC = 25
10-1 100 101
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
2.5
Figure 2. Transfer Characteristics
101
150oC
25oC
100
-55oC
Notes :
1. VDS = 50V
2. 250µ s Pulse Test
10-1
2468
VGS, Gate-Source Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
10
2.0
VGS = 10V
VGS = 20V
1.5
1.0
Note : TJ = 25
0.5
0 5 10 15 20 25 30
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
4500
4000
3500
3000
2500
2000
1500
1000
500
0
10-1
Ciss
Coss
Crss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Notes :
1. VGS = 0 V
2. f = 1 MHz
100 101
VDS, Drain-Source Voltage [V]
101
100
10-1
0.2
150 25
Notes :
1. VGS = 0V
2. 250µ s Pulse Test
0.4 0.6 0.8 1.0 1.2
VSD, Source-Drain voltage [V]
1.4
Figure 6. Gate Charge Characteristics
12
VDS = 180V
10
VDS = 450V
8 VDS = 720V
6
4
2
Note : ID = 11A
0
0 10 20 30 40 50 60 70
QG, Total Gate Charge [nC]
FQA11N90C Rev. A1
3
www.fairchildsemi.com







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