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C122B1

Motorola

SILICON CONTROLLED RECTIFIERS

MOTOROLA SEMICONDUCTOR TECHNICAL DATA www.DataSheet4U.com Silicon Controlled Rectifiers C122(ă)1 Series Reverse Blo...


Motorola

C122B1

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Description
MOTOROLA SEMICONDUCTOR TECHNICAL DATA www.DataSheet4U.com Silicon Controlled Rectifiers C122(ă)1 Series Reverse Blocking Triode Thyristors . . . designed primarily for full-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half-wave silicon gate-controlled, solid-state devices are needed. Glass Passivated Junctions and Center Gate Fire for Greater Parameter Uniformity and Stability Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability Blocking Voltage to 800 Volts Different Leadform Configurations, Suffix (2) thru (6) available, see Leadform Options (Section 4) for Information A SCRs 8 AMPERES RMS 50 thru 800 VOLTS G K CASE 221A-04 (TO-220AB) STYLE 3 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.) Rating Repetitive Peak Off-State Voltage(1) (TJ = 25 to 100°C, Gate Open) Repetitive Peak Reverse Voltage C122F1 C122A1 C122B1 C122D1 C122M1 C122N1 Peak Non-repetitive Reverse Voltage(1) C122F1 C122A1 C122B1 C122D1 C122M1 C122N1 Forward Current RMS (All Conduction Angles) Peak Forward Surge Current (1/2 Cycle, Sine Wave, 60 Hz) Circuit Fusing Considerations (t = 8.3 ms) TC Symbol VDRM VRRM Value 50 100 200 400 600 800 Volts 75 200 300 500 700 800 IT(RMS) ITSM I2t 8 90 34 Amps Amps A2s Unit Volts VRSM p 75°C 1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, (cont.) positive gate volt...




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