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2SB1103 Dataheets PDF



Part Number 2SB1103
Manufacturers SavantIC
Logo SavantIC
Description SILICON POWER TRANSISTOR
Datasheet 2SB1103 Datasheet2SB1103 Datasheet (PDF)

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SB1103 DESCRIPTION ·With TO-220C package ·DARLINGTON ·High DC durrent gain ·Low collector saturation voltage ·Complement to type 2SD1603 APPLICATIONS ·Designed for use in low frequency power amplifier applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Tc=25 ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage.

  2SB1103   2SB1103



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SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SB1103 DESCRIPTION ·With TO-220C package ·DARLINGTON ·High DC durrent gain ·Low collector saturation voltage ·Complement to type 2SD1603 APPLICATIONS ·Designed for use in low frequency power amplifier applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Tc=25 ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current-DC Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE -60 -60 -7 -8 -12 40 150 -55~150 UNIT V V V A A W SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current DC current gain Diode forward voltage CONDITIONS IC=-25mA, RBE=? IE=-50mA, IC=0 IC=-4A ,IB=-8mA IC=-8A ,IB=-80mA IC=-4A ,IB=-8mA IC=-8A ,IB=-80mA VCB=-60V, IE=0 VCE=-50V, RBE=? IC=-4A ; VCE=-3V ID=8A 1000 MIN -60 -7 2SB1103 SYMBOL V(BR)CEO V(BR)EBO VCEsat-1 VCEsat-2 VBEsat-1 VBEsat-2 ICBO ICEO hFE VD TYP. MAX UNIT V V -1.5 -3.0 -2.0 -3.5 -100 -10 V V V V µA µA 3.0 V Switching times ton tstg tf Turn-on time Storage time Fall time IC=-4A ,IB1=-IB2=-8mA 0.5 3.0 1.0 µs µs µs 2 SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1103 Fig.2 Outline dimensions 3 .


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