Document
SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon PNP Power Transistors
2SB1103
DESCRIPTION ·With TO-220C package ·DARLINGTON ·High DC durrent gain ·Low collector saturation voltage ·Complement to type 2SD1603 APPLICATIONS ·Designed for use in low frequency power amplifier applications
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION
Absolute maximum ratings(Tc=25 )
SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current-DC Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE -60 -60 -7 -8 -12 40 150 -55~150 UNIT V V V A A W
SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current DC current gain Diode forward voltage CONDITIONS IC=-25mA, RBE=? IE=-50mA, IC=0 IC=-4A ,IB=-8mA IC=-8A ,IB=-80mA IC=-4A ,IB=-8mA IC=-8A ,IB=-80mA VCB=-60V, IE=0 VCE=-50V, RBE=? IC=-4A ; VCE=-3V ID=8A 1000 MIN -60 -7
2SB1103
SYMBOL V(BR)CEO V(BR)EBO VCEsat-1 VCEsat-2 VBEsat-1 VBEsat-2 ICBO ICEO hFE VD
TYP.
MAX
UNIT V V
-1.5 -3.0 -2.0 -3.5 -100 -10
V V V V µA µA
3.0
V
Switching times ton tstg tf Turn-on time Storage time Fall time IC=-4A ,IB1=-IB2=-8mA 0.5 3.0 1.0 µs µs µs
2
SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB1103
Fig.2 Outline dimensions
3
.