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2SB1106 Dataheets PDF



Part Number 2SB1106
Manufacturers SavantIC
Logo SavantIC
Description SILICON POWER TRANSISTOR
Datasheet 2SB1106 Datasheet2SB1106 Datasheet (PDF)

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SB1106 DESCRIPTION ·With TO-220C package ·DARLINGTON ·High DC durrent gain ·Complement to type 2SD1606 APPLICATIONS ·Designed for use in low frequency power amplifier applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Tc=25 ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-bas.

  2SB1106   2SB1106



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SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SB1106 DESCRIPTION ·With TO-220C package ·DARLINGTON ·High DC durrent gain ·Complement to type 2SD1606 APPLICATIONS ·Designed for use in low frequency power amplifier applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Tc=25 ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current-DC Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE -120 -120 -7 -6 40 150 -55~150 UNIT V V V A W SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current DC current gain Diode forward voltage CONDITIONS IC=-25mA, RBE== IE=-50mA, IC=0 IC=-3A ,IB=-6mA IC=-6A ,IB=-60mA IC=-3A ,IB=-6mA IC=-6A ,IB=-60mA VCB=-120V, IE=0 VCE=-100V, RBE== IC=-3A ; VCE=-3V ID=-6A 1000 MIN -120 -7 2SB1106 SYMBOL V(BR)CEO V(BR)EBO VCEsat-1 VCEsat-2 VBEsat-1 VBEsat-2 ICBO ICEO hFE VD TYP. MAX UNIT V V -1.5 -3.0 -2.0 -3.5 -100 -10 V V V V µA µA 3.0 V 2 SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1106 Fig.2 Outline dimensions 3 .


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