POWER TRANSISTOR. 2SB1134 Datasheet

2SB1134 TRANSISTOR. Datasheet pdf. Equivalent

Part 2SB1134
Description SILICON POWER TRANSISTOR
Feature SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors DES.
Manufacture SavantIC
Datasheet
Download 2SB1134 Datasheet

Ordering number:2091B PNP/NPN Epitaxial Planar Silicon Tran 2SB1134 Datasheet
SavantIC Semiconductor www.DataSheet4U.com Product Specific 2SB1134 Datasheet
isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emi 2SB1134 Datasheet
Recommendation Recommendation Datasheet 2SB1134 Datasheet




2SB1134
SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
DESCRIPTION
·With TO-220F package
·Complement to type 2SD1667
·Low collector saturation voltage
APPLICATIONS
·Relay drivers,high-speed inverters and other
general high-current switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Product Specification
2SB1134
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
IC
ICM
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
PC Collector dissipation
Tj Junction temperature
Tstg Storage temperature
Open emitter
Open base
Open collector
Ta=25
TC=25
MAX
-60
-50
-6
-5
-9
2
25
150
-55~150
UNIT
V
V
V
A
A
W



2SB1134
SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
Product Specification
2SB1134
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-1mA ;RBE=:
V(BR)CBO Collector-base breakdown voltage
IC=-1mA ;IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=-1mA ;IC=0
VCEsat
ICBO
IEBO
hFE-1
Collector-emitter saturation voltage IC=-3A; IB=-0.3A
Collector cut-off current
VCB=-40V ;IE=0
Emitter cut-off current
VEB=-4V; IC=0
DC current gain
IC=-1A ; VCE=-2V
hFE-2
DC current gain
IC=-3A ; VCE=-2V
COB Output capacitance
fT Transition frequency
Switching times
IE=0 ; VCB=-10V; f=1MHz
IC=-1A ; VCE=-5V
ton Turn-on time
ts Storage time
tf Fall time
IC=-2.0A; IB1=-IB2=-0.2A
MIN TYP. MAX UNIT
-50 V
-60 V
-6 V
-0.4 V
-100
µA
-100
µA
70 280
30
160 pF
30 MHz
0.1 µs
0.7 µs
0.2 µs
hFE-1 Classifications
QRS
70-140 100-200 140-280
2





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