Document
SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon PNP Power Transistors
2SB1186
DESCRIPTION ·With TO-220Fa package ·Low collector saturation votlage ·Complement to type 2SD1763 ·High breakdown voltage APPLICATIONS ·For use in low frequency power amplifer applications
PINNING PIN 1 2 3 DESCRIPTION Emitter Collector Base
Absolute maximum ratings(Ta=25 )
SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector -emitter voltage Emitter-base voltage Collector current Collector current-peak Ta=25 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 20 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE -120 -120 -5 -1.5 -3.0 2.0 W UNIT V V V A A
SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Collector output capacitance CONDITIONS IC=-1mA; IB=0 IC=-50µA; IE=0 IE=-50µA; IC=0 IC=-1A ;IB=-0.1A IC=-1A ;IB=-0.1A VCB=-100V; IE=0 VEB=-4V; IC=0 IC=-0.1A ; VCE=-5V IC=-0.1A; VCE=-5V IE=0;f=1MHz ; VCB=-10V 100 MIN -120 -120 -5
2SB1186
SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE fT COB
TYP.
MAX
UNIT V V V
-2.0 -1.5 -1.0 -1.0 320 50 30
V V µA µA
MHz pF
hFE Classifications E 100-200 F 160-320
2
SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB1186
Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm)
3
.