Document
IS62WV10248BLL
www.DataSheet4U.com
ISSI
MARCH 2006
®
1M x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
FEATURES
• High-speed access time: 55ns, 70ns • CMOS low power operation: 36 mW (typical) operating 12 µW (typical) CMOS standby • TTL compatible interface levels • Single power supply: 2.5V--3.6V VDD (IS62WV10248BLL) • Fully static operation: no clock or refresh required • Three state outputs • Industrial temperature available • Lead-free available
DESCRIPTION
The ISSI IS62WV10248BLL is a high-speed, 8M bit static RAMs organized as 1M words by 8 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices. When CS1 is HIGH (deselected) or when CS2 is LOW (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs. The active LOW Write Enable (WE) controls both writing and reading of the memory. The IS62WV10248BLL is packaged in the JEDEC standard 48-pin mini BGA (7.2mm x 8.7mm).
FUNCTIONAL BLOCK DIAGRAM
A0-A19
DECODER
1M x 8 MEMORY ARRAY
VDD GND I/O DATA CIRCUIT
I/O0-I/O7
COLUMN I/O
CS2 CS1 OE WE
Copyright © 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products.
CONTROL CIRCUIT
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. C 03/17/06
1
IS62WV10248BLL
PIN www.DataSheet4U.com DESCRIPTIONS
A0-A19 CS1 CS2 OE WE I/O0-I/O7 NC VDD GND Address Inputs Chip Enable 1 Input Chip Enable 2 Input Output Enable Input Write Enable Input Input/Output No Connection Power Ground
ISSI
®
PIN CONFIGURATION 48-pin mini BGA (B) (7.2mm x 8.7mm)
1
A B C D E F G H
NC
2
OE
3
A0
4
A1
5
A2
6
CS2
NC
NC
A3
A4
CS1
NC
I/O0
NC
A5
A6
NC
I/O4
GND
I/O1
A17
A7
I/O5
VDD
VDD
I/O2
NC
A16
I/O6
GND
I/O3
NC
A14
A15
NC
I/O7
NC
NC
A12
A13
WE
NC
A18
A8
A9
A10
A11
A19
2
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. C 03/17/06
IS62WV10248BLL
www.DataSheet4U.com TRUTH TABLE
ISSI
CS1 H X L L L CS2 X L H H H OE X X H L X I/O Operation High-Z High-Z High-Z DOUT DIN VDD Current ISB1, ISB2 ISB1, ISB2 ICC ICC ICC
®
Mode Not Selected (Power-down) Output Disabled Read Write
WE X X H H L
ABSOLUTE MAXIMUM RATINGS(1)
Symbol VTERM VDD TSTG PT Parameter Terminal Voltage with Respect to GND VDD Related to GND Storage Temperature Power Dissipation Value –0.2 to VDD+0.3 –0.2 to +3.8 –65 to +150 1.0 Unit V V °C W
Note: 1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
OPERATING RANGE (VDD)
Range Commercial Industrial Ambient Temperature 0°C to +70°C –40°C to +85°C IS62WV10248BLL 2.5V - 3.6V 2.5V - 3.6V
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol VOH VOL VIH VIL(1) ILI ILO Parameter Output HIGH Voltage Output LOW Voltage Input HIGH Voltage Input LOW Voltage Input Leakage Output Leakage GND ≤ VIN ≤ VDD GND ≤ VOUT ≤ VDD, Outputs Disabled Test Conditions IOH = -1 mA IOL = 2.1 mA VDD 2.5-3.6V 2.5-3.6V 2.5-3.6V 2.5-3.6V Min. 2.2 — 2.2 –0.2 –1 –1 Max. — 0.4 VDD + 0.3 0.6 1 1 Unit V V V V µA µA
Notes: 1. VIL (min.) = –1.0V for pulse width less than 10 ns.
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. C 03/17/06
3
IS62WV10248BLL
www.DataSheet4U.com (1) CAPACITANCE
ISSI
Conditions VIN = 0V VOUT = 0V Max. 8 10 Unit pF pF
®
Symbol CIN COUT
Parameter Input Capacitance Input/Output Capacitance
Note: 1. Tested initially and after any design or process changes that may affect these parameters.
AC TEST CONDITIONS
Parameter Input Pulse Level Input Rise and Fall Times Input and Output Timing and Reference Level Output Load IS62WV10248BLL (Unit) 0.4 to VDD-0.3V 5 ns VREF See Figures 1 and 2
IS62WV10248BLL 2.5V - 3.6V R1(Ω) R2(Ω) VREF VTM 1029 1728 1.5V 2.8V
AC TEST LOADS
R1 VTM
VTM R1
OUTPUT 30 pF Including jig and scope R2
OUTPUT 5 pF Including jig and scope R2
Figure 1
Figure 2
4
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. C 03/17/06
IS62WV10248BLL
www.DataSheet4U.com POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range) IS62WV10248BLL
ISSI
Test Conditions VDD = Max..