IS62WV10248BLL

IS62WV10248BLL www.DataSheet4U.com ISSI MARCH 2006 ® 1M x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES High-speed access time: 55ns, 70ns CMOS low power operation: 36 mW (typical) operating 12 µW (typical) CMOS standby TTL compatible interface levels Single power supply: 2.5V--3.6V VDD (IS62WV10248BLL) Fully static operation: no clock or refresh required Three state outputs Industrial temperature available Lead-free available DESCRIPTION The ISSI IS62WV10248BLL is a high-speed, 8M bit static RAMs organized as 1M words by 8 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices. When CS1 is HIGH (deselected) or when CS2 is LOW (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs. The active LOW Write Enable (WE) controls both writing and reading of the memory. The IS62WV10248BLL is packaged in the JEDEC standard 48-pin mini BGA (7.2mm x 8.7mm). FUNCTIONAL BLOCK DIAGRAM A0-A19 DECODER 1M x 8 MEMORY ARRAY VDD GND I/O DATA CIRCUIT I/O0-I/O7 COLUMN I/O CS2 CS1 OE WE Copyright © 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISS...