IS62WV1288BLL

IS62WV1288ALL IS62WV1288BLL 128K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES High-speed access time: 45ns, 55ns, 70ns CMOS low power operation: 30 mW (typical) operating 15 µW (typical) CMOS standby TTL compatible interface levels Single power supply: 1.65V--2.2V VDD (62WV1288ALL) 2.5V--3.6V VDD (62WV1288BLL) Fully static operation: no clock or refresh required Three state outputs Industrial temperature available Lead-free available www.DataSheet4U.com ISSI JUNE 2005 ® DESCRIPTION The ISSI IS62WV1288ALL / IS62WV1288BLL are highspeed, 1M bit static RAMs organized as 128K words by 8 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields highperformance and low power consumption devices. When CS1 is HIGH (deselected) or when CS2 is LOW (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs. The active LOW Write Enable (WE) controls both writing and reading of the memory. The IS62WV1288ALL and IS62WV1288BLL are packaged in the JEDEC standard 32-pin TSOP (TYPEI), sTSOP (TYPEI), SOP, and 36-pin mini BGA. FUNCTIONAL BLOCK DIAGRAM A0-A16 DECODER 128K x 8 MEMORY ARRAY VDD GND I/O DATA CIRCUIT I/O0-I/O7 COLUMN I/O CS2 CS1 OE WE CONTROL CIRCUIT Copyright © 2005 Integrated Silicon Solution, Inc. All r...