HEXFET Power MOSFET
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PD - 96050
IRFR3711ZCPbF IRFU3711ZCPbF
Applications l High Frequency Synchronous Buck Converters f...
Description
www.DataSheet4U.com
PD - 96050
IRFR3711ZCPbF IRFU3711ZCPbF
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free
HEXFET® Power MOSFET
VDSS
20V
RDS(on) max
5.7m:
Qg
18nC
Benefits Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current
l
D-Pak IRFR3711ZCPbF
I-Pak IRFU3711ZCPbF
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
Max.
20 ± 20 93 66
Units
V
f f
A W
Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range
g g
370 79 39 0.53 -55 to + 175 W/°C °C
Soldering Temperature, for 10 seconds
300 (1.6mm from case)
Thermal Resistance
Parameter
RθJC RθJA RθJA Junction-to-Case Junction-to-Ambient (PCB Mount) Junction-to-Ambient
Typ.
Max.
1.9 50 110
Units
°C/W
gÃ
––– ––– –––
Notes through
are on page 11
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1
02/23/06
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IRFR/U3711ZCPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
BVDSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) ∆VGS(th)/∆TJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Bre...
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