High power PNP epitaxial planar bipolar transistor
Description
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2STA2120
High power PNP epitaxial planar bipolar transistor
Preliminary data
Features
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High breakdown voltage VCEO = 250 V Complementary to 2STC5948 Fast-switching speed Typical ft = 25 MHz Fully characterized at 125 oC
3 2 1
Applications
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Audio power amplifier
TO-3P
Description
Figure 1. The device is a PNPtransistor ma...
