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IXFK27N80. 27N80 Datasheet

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IXFK27N80. 27N80 Datasheet






27N80 IXFK27N80. Datasheet pdf. Equivalent




27N80 IXFK27N80. Datasheet pdf. Equivalent





Part

27N80

Description

IXFK27N80



Feature


Not for New Designs www.DataSheet4U.com VDSS IXFK IXFK IXFN IXFN 27N80 25N80 2 7N80 25N80 800 800 800 800 V V V V ID2 5 27 A 25 A 27 A 25 A RDS(on) 0.30 0.3 5 0.30 0.35 Ω Ω Ω Ω HiPerFETTM Power MOSFETs N-Channel Enhancement Mo de Avalanche Rated, High dv/dt, Low trr TO-264 AA (IXFK) Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg TL VISOL Md Weight Sy.
Manufacture

IXYS Corporation

Datasheet
Download 27N80 Datasheet


IXYS Corporation 27N80

27N80; mbol Test Conditions 1.6 mm (0.063 in) f rom case for 10 s 50/60 Hz, RMS IISOL 1 mA t = 1 min t=1s 300 0.9/6 10 TC= 25°C IS≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C, Chip capability TC = 25°C, pulse width limited by TJM TC = 25°C Maximum Ratings .


IXYS Corporation 27N80

IXFK IXFN 800 800 ± 20 ± 30 27N80 27 2 5N80 25 27N80 108 25N80 100 27N80 14 25 N80 13 30 5 500 800 800 ± 20 ± 30 27 25 108 100 14 13 30 5 520 150 -55 ... + 150 2500 3000 V V V V A A A A A A mJ V/ ns W °C °C °C °C V~ V~ Features • • • • • • G D S (TAB) min iBLOC, SOT-227 B (IXFN) E153432 D G S G S S S D G = Gate S = Source D = Dr ain TAB = Drain Either Source termina.


IXYS Corporation 27N80

l at miniBLOC can be used as Main or Kel vin Source -55 ... +150 Mounting torq ue Terminal connection torque 1.5/13 N m/lb.in. 1.5/13 Nm/lb.in. 30 g Charact eristic Values (TJ = 25°C, unless othe rwise specified) min. typ. max. 800 0.0 96 2 -0.214 ±200 TJ = 25°C TJ = 125° C 25N80 27N80 500 2 0.35 0.30 4.5 V %/K V %/K nA µA mA Ω Ω • • Inte rnational standard packages JED.

Part

27N80

Description

IXFK27N80



Feature


Not for New Designs www.DataSheet4U.com VDSS IXFK IXFK IXFN IXFN 27N80 25N80 2 7N80 25N80 800 800 800 800 V V V V ID2 5 27 A 25 A 27 A 25 A RDS(on) 0.30 0.3 5 0.30 0.35 Ω Ω Ω Ω HiPerFETTM Power MOSFETs N-Channel Enhancement Mo de Avalanche Rated, High dv/dt, Low trr TO-264 AA (IXFK) Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg TL VISOL Md Weight Sy.
Manufacture

IXYS Corporation

Datasheet
Download 27N80 Datasheet




 27N80
Not for New Designs
HiPerFETwww.DataSheet4U.com TM Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low trr
IXFK 27N80
IXFK 25N80
IXFN 27N80
IXFN 25N80
Symbol
Test Conditions
Maximum Ratings
IXFK
IXFN
V
DSS
V
DGR
VGS
V
GSM
ID25
IDM
IAR
EAR
dv/dt
PD
TJ
TJM
Tstg
T
L
VISOL
Md
T
J
= 25°C to 150°C
T
J
=
25°C
to
150°C;
R
GS
=
1
M
Continuous
Transient
800 800
800 800
±20 ±20
±30 ±30
V
V
V
V
TC = 25°C, Chip capability
27N80
25N80
TC = 25°C, pulse width limited by TJM 27N80
TC = 25°C
25N80
27N80
25N80
27
25
108
100
14
13
27
25
108
100
14
13
A
A
A
A
A
A
TC= 25°C
ISIDM, di/dt 100 A/µs, VDD VDSS,
T
J
150°C,
R
G
=
2
TC = 25°C
30 30 mJ
5 5 V/ns
500 520
-55 ... +150
150
-55 ... +150
W
°C
°C
°C
1.6 mm (0.063 in) from case for 10 s
300
- °C
50/60 Hz, RMS
IISOL 1 mA
t = 1 min
t=1s
Mounting torque
Terminal connection torque
-
-
0.9/6
-
2500
3000
V~
V~
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
Weight
10 30 g
Symbol
VDSS
VGH(th)
I
GSS
IDSS
RDS(on)
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ.
max.
VGS = 0 V, ID = 3 mA
VDSS temperature coefficient
VDS = VGS, ID = 8 mA
VGS(th) temperature coefficient
800
2
V
GS
=
±20
V,
DC
V
DS
=
0
VDS = 0.8 • VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
VGS = 10 V, ID = 0.5 • ID25
Pulse test, t 300 µs,
duty cycle d 2 %
25N80
27N80
0.096
-0.214
V
%/K
4.5 V
%/K
±200 nA
500 µA
2 mA
0.35
0.30
VDSS
800 V
800 V
800 V
800 V
ID25
27 A
25 A
27 A
25 A
TO-264 AA (IXFK)
RDS(on)
0.30
0.35
0.30
0.35
G
D
S
miniBLOC, SOT-227 B (IXFN)
E153432
S
DG
(TAB)
G
S
S
S
D
G = Gate
D = Drain
S = Source
TAB = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
International standard packages
JEDEC TO-264 AA, epoxy meet
UL 94 V-0, flammability classification
miniBLOC, with Aluminium nitride
isolation
Low RDS (on) HDMOSTM process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
Fast intrinsic Rectifier
Applications
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Advantages
Easy to mount
Space savings
High power density
© 2002 IXYS All rights reserved
95561D(6/02)




 27N80
IXFK 25N80 IXFK 27N80
IXFN 25N80 IXFN 27N80
Symbol
Test Conditions
www.DataSheet4U.com
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TO-264 AA Outline
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
t
f
Qg(on)
Qgs
Qgd
RthJC
RthCK
RthJC
RthCK
VDS = 10 V; ID = 0.5 • ID25, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
16 28
7930 8400 9740
630 712 790
146 192 240
S
pF
pF
pF
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 1 (External),
30
80
75
40
ns
ns
ns
ns
320
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID2538
120
350 400
46 56
130 142
nC
nC
nC
TO-264 AA
TO-264 AA
0.25 K/W
0.15
K/W
miniBLOC, SOT-227 B
miniBLOC, SOT-227 B
0.24 K/W
0.05
K/W
Dim.
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
Millimeter
Min. Max.
4.82 5.13
2.54 2.89
2.00 2.10
1.12 1.42
2.39 2.69
2.90 3.09
0.53 0.83
25.91 26.16
19.81 19.96
5.46 BSC
0.00 0.25
0.00
20.32
2.29
3.17
0.25
20.83
2.59
3.66
6.07 6.27
8.38 8.69
3.81 4.32
1.78 2.29
6.04 6.30
1.57 1.83
Inches
Min. Max.
.190 .202
.100 .114
.079 .083
.044 .056
.094 .106
.114 .122
.021 .033
1.020 1.030
.780 .786
.215 BSC
.000 .010
.000 .010
.800 .820
.090 .102
.125 .144
.239 .247
.330 .342
.150 .170
.070 .090
.238 .248
.062 .072
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IS VGS = 0 V
27N80
25N80
I Repetitive;
27N80
SM
pulse width limited by TJM 25N80
27 A
25 A
108 A
100 A
VSD IF = 100 A, VGS = 0 V,
Pulse test, t 300 µs, duty cycle d 2 %
1.5 V
trr IF = IS, -di/dt = 100 A/µs, VR = 100 V TJ =25°C
250 n s
TJ =125°C
400 n s
QRM
TJ =25°C
2
µC
IRM 17 A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
miniBLOC, SOT-227 B
M4 screws (4x) supplied
Dim.
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
Q
R
S
T
U
Millimeter
Min. Max.
31.50
7.80
31.88
8.20
4.09 4.29
4.09 4.29
4.09
14.91
4.29
15.11
30.12
38.00
30.30
38.23
11.68
8.92
12.22
9.60
0.76
12.60
0.84
12.85
25.15
1.98
25.42
2.13
4.95
26.54
5.97
26.90
3.94 4.42
4.72 4.85
24.59
-0.05
25.07
0.1
Inches
Min. Max.
1.240
0.307
1.255
0.323
0.161
0.161
0.169
0.169
0.161
0.587
0.169
0.595
1.186
1.496
1.193
1.505
0.460
0.351
0.481
0.378
0.030
0.496
0.033
0.506
0.990
0.078
1.001
0.084
0.195
1.045
0.235
1.059
0.155
0.186
0.174
0.191
0.968
-0.002
0.987
0.004
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715 6,306,728B1
5,381,025




 27N80
www.Data4S0heet4U.com
TJ = 25OC
30
20
VGS = 9V
8V
7V
6V
5V
10
4V
0
0 2 4 6 8 10
VDS - Volts
Figure 1. Output Characteristics at 25OC
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0
VGS = 10V
TJ = 125OC
TJ = 25OC
10 20 30
40
50
ID - Amperes
Figure 3. RDS(on) normalized to 0.5 ID25 value
vs. ID
30
25
IXF_25N80
IXFN27N80
20
IXFK27N80
15
10
5
0
-50 -25 0 25 50 75 100 125 150
TC - Degrees C
Figure 5. Drain Current vs. Case Temperature
© 2002 IXYS All rights reserved
IXFK 25N80 IXFK 27N80
IXFN 25N80 IXFN 27N80
40
TJ = 125OC
30
20
VGS = 9V
8V
7V
6V
5V
10
4V
0
0 4 8 12 16 20
VDS - Volts
Figure 2. Output Characteristics at 125OC
2.6
2.4 VGS = 10V
2.2
2.0
1.8 ID = 27A
1.6
1.4 ID = 13.5A
1.2
1.0
25 50 75 100 125 150
TJ - Degrees C
Figure 4. RDS(on) normalized to 0.5 ID25 value vs. TJ
30
25
20
15
10 TJ = 125oC
5
TJ = 25oC
0
2345
VGS - Volts
Figure 6. Admittance Curves
6
7



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