2SB1362

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SB1362 DESCRIPTION ·With TO-3PN package ·Wide area of safe operation ·Complement to type 2SD2053 APPLICATIONS ·For high power amplifier applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Tc=25 ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current -peak Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -150 -150 -5 -9 -15 100 150 -55~150 UNIT V V V A A W SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=-25mA; IB=0 IC=-7A; IB=-0.7A IC=-7A;VCE=-5V VCB=-150V; IE=0 VEB=-5V; IC=0 IC=-20mA ; VCE=-5V IC=-1A ; VCE=-5V IC=-7A ; VCE=-5V IC=-0.5A ; VCE=-5V f=1MHz;VCB=-10V 20 60 15 MIN -150 2SB1362 SYMBOL V(BR)CEO VCEsat VBE ICBO IEBO hFE-1 hFE-2 hFE-3 fT COB TYP. MAX UNIT V -2.0 -1.8 -50 -50 V V µA µA 200 15 270 MHz pF hFE...