2SB1370 TRANSISTOR Datasheet

2SB1370 Datasheet PDF, Equivalent


Part Number

2SB1370

Description

SILICON POWER TRANSISTOR

Manufacture

SavantIC

Total Page 3 Pages
Datasheet
Download 2SB1370 Datasheet


2SB1370
SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
DESCRIPTION
·With TO-220Fa package
·PC=2W(Ta=25 ) /30W(TC=25 )
·Low collector saturation voltage
·Wide area of safe operation
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector
Base
Product Specification
2SB1370
·
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector -emitter voltage
VEBO
Emitter-base voltage
IC Collector current
ICM Collector current-peak
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
Ta=25
TC=25
VALUE
-60
-60
-5
-3
-6
2.0
30
150
-55~150
UNIT
V
V
V
A
A
W

2SB1370
SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-1mA; IB=0
V(BR)CBO Collector-base breakdown voltage
IC=-50µA; IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=-50µA; IC=0
VCEsat Collector-emitter saturation voltage IC=-2A ;IB=-0.2A
VBEsat
Base-emitter saturation voltage
ICBO Collector cut-off current
IC=-2A; IB=-0.2A
VCB=-60V; IE=0
IEBO Emitter cut-off current
VEB=-4V; IC=0
hFE DC current gain
IC=-0.5A ; VCE=-5V
fT Transition frequency
IC=-0.5A; VCE=-5V
COB Collector output capacitance
f=1MHz ; VCB=10V
Product Specification
2SB1370
MIN TYP. MAX UNIT
-60 V
-60 V
-5 V
-1.5 V
-1.5 V
-10 µA
-10 µA
100 320
15 MHz
80 pF
2


Features SavantIC Semiconductor www.DataSheet4U.c om Product Specification Silicon PNP Power Transistors 2SB1370 · DESCRIPT ION ·With TO-220Fa package ·PC=2W(Ta= 25 ) /30W(TC=25 ) ·Low collector satur ation voltage ·Wide area of safe opera tion PINNING PIN 1 2 3 DESCRIPTION Emi tter Collector Base Absolute maximum r atings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage C ollector -emitter voltage Emitter-base voltage Collector current Collector cur rent-peak Ta=25 PC Collector power diss ipation TC=25 Tj Tstg Junction temperat ure Storage temperature 30 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE -60 -60 -5 -3 -6 2.0 W UNIT V V V A A SavantIC Semiconductor www.DataSheet4U.com Product Specificat ion Silicon PNP Power Transistors CHAR ACTERISTICS Tj=25 unless otherwise spec ified PARAMETER Collector-emitter break down voltage Collector-base breakdown v oltage Emitter-base breakdown voltage C ollector-emitter saturation voltage Base-emitter saturation voltage .
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