HEXFET Power MOSFET
www.DataSheet4U.com PD - 94946
SMPS MOSFET
Applications l High Frequency DC-DC converters l Lead-Free
IRFB31N20DPbF IR...
Description
www.DataSheet4U.com PD - 94946
SMPS MOSFET
Applications l High Frequency DC-DC converters l Lead-Free
IRFB31N20DPbF IRFS31N20DPbF IRFSL31N20DPbF
HEXFET® Power MOSFET
VDSS
200V
RDS(on) max
0.082Ω
ID
31A
Benefits l Low Gate to Drain to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design,(See AN 1001) l Fully Characterized Avalanche Voltage and Current
TO-262 TO-220AB D2Pak IRFB31N20DPbF IRFS31N20DPbF IRFSL31N20DPbF
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw
Max.
31 21 124 3.1 200 1.3 ± 30 2.1 -55 to + 175 300 (1.6mm from case ) 10 lbfin (1.1Nm)
Units
A W W/°C V V/ns °C
Applicable Off Line SMPS Topologies
l
Telecom 48V Input DC/DC Active Clamp Reset Forward Converter
Notes
through
are on page 11
www.irf.com
1
3/1/04
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IRFB/S/SL31N20DPbF
Static @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
∆V(BR)DSS/∆TJ
RDS(on) VGS(th) IDSS IGSS
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage...
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