N-Channel MOSFET. FDPF24N40 Datasheet

FDPF24N40 Datasheet PDF, Equivalent


Part Number

FDPF24N40

Description

N-Channel MOSFET

Manufacture

Fairchild Semiconductor

Total Page 9 Pages
PDF Download
Download FDPF24N40 Datasheet


FDPF24N40 Datasheet
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FDP24N40 / FDPF24N40
N-Channel MOSFET
400V, 24A, 0.175Ω
Features
• RDS(on) = 0.140Ω ( Typ.)@ VGS = 10V, ID = 12A
• Low gate charge ( Typ. 46nC)
• Low Crss ( Typ. 25pF)
• Fast switching
• 100% avalanche tested
• Improve dv/dt capability
• RoHS compliant
December 2007
UniFETTM
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high
efficient switching mode power supplies and active power factor
correction.
D
GDS
TO-220
FDP Series
GD S
TO-220F
FDPF Series
G
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
-Continuous (TC = 25oC)
-Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
FDP24N40 FDPF24N40
400
±30
24 24*
14.4 14.4*
96 96*
1296
24
22.7
4.5
227 40
1.8 0.3
-55 to +150
300
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Sink Typ.
Thermal Resistance, Junction to Ambient
FDP24N40
0.55
0.5
62.5
FDPF24N40
3.0
-
62.5
Units
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
Units
oC/W
©2007 Fairchild Semiconductor Corporation
FDP24N40 / FDPF24N40 Rev. A
1
www.fairchildsemi.com

FDPF24N40 Datasheet
Package Marking and Ordering Information TC = 25oC unless otherwise noted
www.DDaetavSicheeeMt4aUrk.icnogm
Device
Package
Reel Size
Tape Width
FDP24N40
FDP24N40
TO-220
-
-
FDPF24N40
FDPF24N40
TO-220F
-
-
Quantity
50
50
Electrical Characteristics
Symbol
Parameter
Test Conditions
Min.
Off Characteristics
BVDSS
ΔBVDSS
/ ΔTJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250μA, VGS = 0V, TJ = 25oC
ID = 250μA, Referenced to 25oC
VDS = 400V, VGS = 0V
VDS = 320V, TC = 125oC
VGS = ±30V, VDS = 0V
400
-
-
-
-
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
VGS = VDS, ID = 250μA
VGS = 10V, ID = 12A
VDS = 20V, ID = 12A
(Note 4)
3.0
-
-
Dynamic Characteristics
Ciss
Coss
Crss
Qg(tot)
Qgs
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VDS = 25V, VGS = 0V
f = 1MHz
VDS = 320V, ID = 24A
VGS = 10V
(Note 4, 5)
-
-
-
-
-
-
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 200V, ID = 24A
RG = 25Ω
(Note 4, 5)
-
-
-
-
Drain-Source Diode Characteristics
IS Maximum Continuous Drain to Source Diode Forward Current
ISM Maximum Pulsed Drain to Source Diode Forward Current
VSD
Drain to Source Diode Forward Voltage
VGS = 0V, ISD = 24A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0V, ISD = 24A
dIF/dt = 100A/μs
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 4.5mH, IAS = 24A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD 24A, di/dt 200A/μs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width 300μs, Duty Cycle 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
(Note 4)
-
-
-
-
-
Typ. Max. Units
- -V
0.4 - V/oC
-1
μA
- 10
- ±100 nA
-
0.140
34
5.0
0.175
-
V
Ω
S
2270
365
25
46
12
20
3020
490
38
60
-
-
pF
pF
pF
nC
nC
nC
40 90 ns
90 190 ns
110 230 ns
65 140 ns
- 24 A
- 96 A
- 1.4 V
360 - ns
4.7 - μC
FDP24N40 / FDPF24N40 Rev. A
2 www.fairchildsemi.com


Features Datasheet pdf FDP24N40 / FDPF24N40 N-Channel MOSFET w ww.DataSheet4U.com December 2007 FDP2 4N40 / FDPF24N40 N-Channel MOSFET 400V, 24A, 0.175Ω Features • RDS(on) = 0. 140Ω ( Typ.)@ VGS = 10V, ID = 12A • Low gate charge ( Typ. 46nC) • Low Cr ss ( Typ. 25pF) • Fast switching • 100% avalanche tested • Improve dv/dt capability • RoHS compliant UniFETT M Description These N-Channel enhancem ent mode power field effect transistors are produced using Fairchild’s propr ietary, planar stripe, DMOS technology. This advanced technology has been espe cially tailored to minimize on-state re sistance, provide superior switching pe rformance, and withstand high energy pu lse in the avalanche and commutation mo de. These devices are well suited for h igh efficient switching mode power supp lies and active power factor correction . D G G D S TO-220 FDP Series GD S TO-220F FDPF Series S MOSFET Maximum Ratings TC = 25oC unless otherwise not ed Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain to So.
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