250V N-Channel MOSFET
FDP2710 — N-Channel PowerTrench® MOSFET
October 2013
FDP2710
N-Channel PowerTrench® MOSFET
250 V, 50 A, 42.5 mΩ
Featu...
Description
FDP2710 — N-Channel PowerTrench® MOSFET
October 2013
FDP2710
N-Channel PowerTrench® MOSFET
250 V, 50 A, 42.5 mΩ
Features
RDS(on) = 36.3 mΩ ( Typ.)@ VGS = 10 V, ID = 25 A Fast Switching Speed Low Gate Charge High Performance Trench technology for Extremely Low
RDS(on) High Power and Current Handing Capability
RoHS Compliant
General Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
Applications
Consumer Appliances Synchronous Rectification
D
GDS
TO-220
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDS VGS ID
IDM EAS dv/dt PD
TJ, TSTG TL
Drain-Source Voltage
Gate-Source voltage
Drain Current Drain Current
- Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation
(TC = 25°C) - Derate above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
RθJC RθJA
Parameter
Thermal Resistance, Junction-to-Case, Max. Thermal Resistance, Junction-to-Ambient, Max.
G
S
FDP2710
250 ± 30 50 31.3 See Figure 9 145 4.5 260 2.1 -55 to +150 300
FDP2710
0.48 62.5
©2007 Fairchild Semiconductor Corporation
1
FDP2710 Rev. C1
Unit
V V A A A mJ V/ns W W/°C °C °C
Unit
°C...
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