FDP2710

FDP2710 — N-Channel PowerTrench® MOSFET October 2013 FDP2710 N-Channel PowerTrench® MOSFET 250 V, 50 A, 42.5 mΩ Features RDS(on) = 36.3 mΩ ( Typ.)@ VGS = 10 V, ID = 25 A Fast Switching Speed Low Gate Charge High Performance Trench technology for Extremely Low RDS(on) High Power and Current Handing Capability RoHS Compliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. Applications Consumer Appliances Synchronous Rectification D GDS TO-220 Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter VDS VGS ID IDM EAS dv/dt PD TJ, TSTG TL Drain-Source Voltage Gate-Source voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed (Note 1) Single Pulsed Avalanche Energy (Note 2) Peak Diode Recovery dv/dt (Note 3) Power Dissipation (TC = 25°C) - Derate above 25°C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction-to-Case, Max. Thermal Resistance, Junction-to-Ambient, Max. G S FDP2710 250 ± 30 50 31.3 See Figure 9 145 4.5 260 2.1 -55 to +150 300 FDP2710 0.48 62.5 ©2007 Fairchild Semiconductor Corporation 1 FDP2710 Rev. C1 Unit V V A A A mJ V/ns W W/°C °C °C Unit °C...