2SB1605A

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SB1605 2SB1605A DESCRIPTION ·With TO-220F package ·Low collector saturation voltage ·Good linearity of hFE APPLICATIONS ·For low-voltage switching applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER 2SB1605 VCBO Collector-base voltage 2SB1605A 2SB1605 VCEO Collector-emitter voltage 2SB1605A VEBO IC ICM Emitter-base voltage Collector current Collector current-peak Ta=25 PC Collector dissipation TC=25 Tj Tstg Junction temperature Storage temperature 35 150 -55~150 Open collector Open base -80 -5 -3 -5 2 W V A A Open emitter -80 -60 V CONDITIONS MAX -60 V UNIT SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2SB1605 IC=-30mA ;IB=0 2SB1605A IC=-3A ;IB=-0.375A IC=-3A ; VCE=-4V VCE=-60V; VBE=0 CONDITIONS SYMBOL 2SB1605 2SB1605A MIN -60 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage V -80 -1.2 -1.8 V V VCEsat VBE Collector-emitter saturation voltage Base-emitter on voltage 2SB1605 2SB1605A 2SB1605 2SB1605A ICES Collector cut-off current -200 VCE=-80V; VBE=0 VCE=-30V; IB=0 -300 VCE=-60V; IB=0 VEB=-5V; IC=0 IC=-1A ; VCE=-4V IC=-3A ; VCE=-4V IC=-0.5A ; VCE=-10V 70 10 30 -1 250 µA ICEO Collector cut-off current µA IEBO hFE-1 hFE-2 fT Emitter ...