2SB1655

SavantIC Semiconductor Silicon PNP Power Transistors Product Specification 2SB1655 DESCRIPTION ·With TO-220F package ·Excellent DC current gain characteristics ·Low collector saturation voltage ·Wide area of safe operation ·Complement to type 2SD2394 PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER VCBO Collector-base voltage VCEO Collector-emitter voltage VEBO Emitter-base voltage IC Collector current ICM Collector current-peak PC Collector dissipation Tj Junction temperature Tstg Storage temperature CONDITIONS Open emitter Open base Open collector Ta=25 TC=25 MAX -80 -60 -7 -3 -6 2 25 150 -55~150 UNIT V V V A A W SavantIC Semiconductor Silicon PNP Power Transistors Product Specification 2SB1655 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=-1mA ;IB=0 V(BR)CBO Collector-base breakdown voltage IC=-50µA ;IE=0 V(BR)EBO Emitter-base breakdown voltage IE=-50µA ;IC=0 VCEsat Collector-emitter saturation voltage IC=-2A ;IB=-0.2A VBEsat Base-emitter saturation voltage IC=-2A ;IB=-0.2A ICBO Collector cut-off current VCB=-60V; IE=0 IEBO Emitter cut-off current VEB=-7V; IC=0 hFE DC current gain IC=-0.5A ; VCE=-5V COB Output capacitance IE=0 ; VCB=-10V;f=1MHz fT Transition frequency IC=-0.5A ; VCE=-5V MIN TYP. MAX UNIT -60 V -80 V -7 V -1.5 V -1...