SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors www.DataSheet4U.com
2SC508
DESCRIPTION ·W...
SavantIC Semiconductor
Product Specification
Silicon
NPN Power
Transistors www.DataSheet4U.com
2SC508
DESCRIPTION ·With TO-66 package ·High collector-base breakdown voltage :VCBO=180V(min) APPLICATIONS ·For power switching and TV horizontal output applications.
PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-66) and symbol DESCRIPTION
Absolute maximum ratings(Ta=? )
SYMBOL VCBO VCEO VEBO IC PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=25? CONDITIONS Open emitter Open base Open collector VALUE 180 60 6 4 25 150 -65~200 UNIT V V V A W ? ?
SavantIC Semiconductor
Product Specification
Silicon
NPN Power
Transistors www.DataSheet4U.com
2SC508
CHARACTERISTICS
Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V(BR)CEO
Collector-emitter breakdown voltage
IC=30mA; IB=0
60
V
V(BR)CBO
Collector-base breakdown voltage
IC=1mA; IE=0
180
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA; IC=0
6
V
VCEsat
Collector-emitter saturation voltage
IC=4A; IB=0.4 A
1.5
V
VBEsat
Base-emitter saturation voltage
IC=4A; IB=0.4 A
1.5
V
ICBO
Collector cut-off current
VCB=180V;IE=0
100
µA
IEBO
Emitter cut-off current
VEB=6V; IC=0
100
µA
hFE
DC current gain
IC=4A ; VCE=5V
20
2
SavantIC Semiconductor
Product Specification
Silicon
NPN Power
Transistors www.DataSheet4U....