SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors www.DataSheet4U.com
2SC792
DESCRIPTION ·W...
SavantIC Semiconductor
Product Specification
Silicon
NPN Power
Transistors www.DataSheet4U.com
2SC792
DESCRIPTION ·With TO-3 package ·High breakdown voltage APPLICATIONS ·For voltage
regulator,inverter,switching mode power supply applications
PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION
Absolute maximum ratings(Ta=? )
SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25? CONDITIONS Open emitter Open base Open collector VALUE 400 300 5 1.5 50 150 -55~150 UNIT V V V A W ? ?
SavantIC Semiconductor
Product Specification
Silicon
NPN Power
Transistors www.DataSheet4U.com
CHARACTERISTICS
Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN
2SC792
TYP.
MAX
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
IC=10mA ;IB=0
300
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA ;IC=0
5
V
VCEsat
Collector-emitter saturation voltage
IC=1.5A; IB=0.3A
5.0
V
VBEsat
Base-emitter saturation voltage
IC=1.5A; IB=0.3A
1.5
V
ICBO
Collector cut-off current
VCB=300V; IE=0
50
µA
IEBO
Emitter cut-off current
VEB=5V; IC=0
50
µA
hFE
DC current gain
IC=0.3A ; VCE=10V
30
200
fT
Transition frequency
IC=0.1A ; VCE=10V
10
MHz
2
SavantIC Semiconductor
Product Specification
Silicon
NPN Power
Transistors www.DataSheet4U.com
PACKAGE O...