2SC1113

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors www.DataSheet4U.com 2SC1113 DESCRIPTION ·With TO-66 package ·High current capacity ·Wide area of safe operation APPLICATIONS ·For power amplifier and switching applications PINNING (See Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-66) and symbol Collector DESCRIPTION Absolute maximum ratings(Ta=25? ) SYMBOL VCBO VCEO VEBO IC PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=25? Open emitter Open base Open collector CONDITIONS VALUE 120 100 5 6 40 150 -55~150 UNIT V V V A W ? ? SavantIC Semiconductor Product Specification Silicon NPN Power Transistors www.DataSheet4U.com CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC1113 TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=25mA ; IB=0 100 V V(BR)EBO Emitter-base breakdown voltage IE=1mA; IC=0 5 V VCEsat Collector-emitter saturation voltage IC=5A; IB=0.5A 1.0 V VBEsat Base-emitter saturation voltage IC=5A; IB=0.5A 1.5 V ICEO Collector cut-off current VCE=120V; IB=0 10 µA IEBO Emitter cut-off current VEB=5V; IC=0 10 µA hFE DC current gain IC=5A ; VCE=4V 30 fT Transition frequency IC=0.5A ; VCE=12V 10 MHz 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors www.DataSheet4U.com PACKAGE OUTLIN...