Document
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors www.DataSheet4U.com
2SC1161
DESCRIPTION ·With TO-66 package ·Low collector saturation voltage APPLICATIONS ·For low frequency high voltage power amplifier TV vertical deflection output applications.
PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-66) and symbol DESCRIPTION
Absolute maximum ratings(Ta=? )
SYMBOL VCBO VCEO VEBO IC PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=25? Open emitter Open base Open collector CONDITIONS VALUE 200 120 6 1 15 150 -55~150 UNIT V V V A W ? ?
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors www.DataSheet4U.com
CHARACTERISTICS
Tj=25? unless otherwise specified SYMBOL V(BR)CEO V(BR)EBO VCEsat VBE sat ICBO IEBO hFE fT PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=50mA ;IB=0 IE=1mA ;IC=0 IC=500mA; IB=50mA IC=500mA; IB=50mA VCB=120V; IE=0 VEB=6V; IC=0 IC=200mA ; VCE=5V IC=200mA ; VCE=10V 30 5 MIN 120 6
2SC1161
TYP.
MAX
UNIT V V
1.5 2.0 1.0 1.0 200
V V µA µA
MHz
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors www.DataSheet4U.com
PACKAGE OUTLINE
2SC1161
Fig.2 outline dimensions
3
.