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BC-327 Dataheets PDF



Part Number BC-327
Manufacturers Philips
Logo Philips
Description PNP general purpose transistor
Datasheet BC-327 DatasheetBC-327 Datasheet (PDF)

DISCRETE SEMICONDUCTORS www.DataSheet4U.com DATA SHEET book, halfpage M3D186 BC327 PNP general purpose transistor Product specification Supersedes data of 1997 Mar 10 1999 Apr 15 Philips Semiconductors www.DataSheet4U.com Product specification PNP general purpose transistor FEATURES • High current (max. 500 mA) • Low voltage (max. 45 V). APPLICATIONS • General purpose switching and amplification, e.g. driver and output stages of audio amplifiers. DESCRIPTION PNP transistor in a TO-92; SOT54 .

  BC-327   BC-327


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DISCRETE SEMICONDUCTORS www.DataSheet4U.com DATA SHEET book, halfpage M3D186 BC327 PNP general purpose transistor Product specification Supersedes data of 1997 Mar 10 1999 Apr 15 Philips Semiconductors www.DataSheet4U.com Product specification PNP general purpose transistor FEATURES • High current (max. 500 mA) • Low voltage (max. 45 V). APPLICATIONS • General purpose switching and amplification, e.g. driver and output stages of audio amplifiers. DESCRIPTION PNP transistor in a TO-92; SOT54 plastic package. NPN complement: BC337. 1 handbook, halfpage BC327 PINNING PIN 1 2 3 emitter base collector DESCRIPTION 2 3 3 2 1 MAM281 Fig.1 Simplified outline (TO-92; SOT54) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 CONDITIONS open emitter open base open collector − − − − − − − −65 − −65 MIN. MAX. −50 −45 −5 −500 −1 −200 625 +150 150 +150 V V V mA A mA mW °C °C °C UNIT 1999 Apr 15 2 Philips Semiconductors www.DataSheet4U.com Product specification PNP general purpose transistor THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL ICBO IEBO hFE PARAMETER collector cut-off current emitter cut-off current DC current gain BC327 BC327-16 BC327-25 BC327-40 hFE VCEsat VBE Cc fT Note 1. VBE decreases by about −2 mV/K with increasing temperature. DC current gain collector-emitter saturation voltage base-emitter voltage collector capacitance transition frequency IC = −500 mA; VCE = −1 V; see Figs 2, 3 and 4 IC = −500 mA; IB = −50 mA IC = −500 mA; VCE = −1 V; note 1 IE = ie = 0; VCB = −10 V; f = 1 MHz IC = −10 mA; VCE = −5 V; f = 100 MHz CONDITIONS IE = 0; VCB = −20 V IE = 0; VCB = −20 V; Tj = 150 °C IC = 0; VEB = −5 V IC = −100 mA; VCE = −1 V; see Figs 2, 3 and 4 MIN. − − − 100 100 160 250 40 − − − 80 TYP. − − − − − − − − − − 10 − PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 VALUE 0.2 BC327 UNIT K/mW MAX. −100 −5 −100 600 250 400 600 − −700 −1.2 − − UNIT nA µA nA mV V pF MHz 1999 Apr 15 3 Philips Semiconductors www.DataSheet4U.com Product specification PNP general purpose transistor BC327 handbook, full pagewidth 250 MBH717 hFE 200 VCE = −1 V 150 100 50 0 −10−1 −1 −10 −102 IC (mA) −103 BC327-16. Fig.2 DC current gain; typical values. handbook, full pagewidth 500 MBH718 hFE 400 VCE = −1 V 300 200 100 0 −10−1 −1 −10 −102 IC (mA) −103 BC327-25. Fig.3 DC current gain; typical values. 1999 Apr 15 4 Philips Semiconductors www.DataSheet4U.com Product specification PNP general purpose transistor BC327 handbook, full pagewidth 500 MBH719 hFE 400 VCE = −1 V 300 200 100 0 −10−1 −1 −10 −102 IC (mA) −103 BC327-40. Fig.4 DC current gain; typical values. 1999 Apr 15 5 Philips Semiconductors www.DataSheet4U.com Product specification PNP general purpose transistor PACKAGE OUTLINE Plastic single-ended leaded (through hole) package; 3 leads BC327 SOT54 c E d A L b 1 D 2 e1 e 3 b1 L1 0 2.5 scale 5 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 5.2 5.0 b 0.48 0.40 b1 0.66 0.56 c 0.45 0.40 D 4.8 4.4 d 1.7 1.4 E 4.2 3.6 e 2.54 e1 1.27 L 14.5 12.7 L1(1) 2.5 Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION SOT54 REFERENCES IEC JEDEC TO-92 EIAJ SC-43 EUROPEAN PROJECTION ISSUE DATE 97-02-28 1999 Apr 15 6 Philips Semiconductors www.DataSheet4U.com Product specification PNP general purpose transistor DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values BC327 This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of t.


FR9024 BC-327 ISA1235AC1


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