ISA2191AT2

〈Transistor〉 ISA2191AT2 www.DataSheet4U.com FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE OUTLINE DRAWING Unit：ｍｍ DESCRIPTION ISA2191AT2 is a super mini package resin sealed silicon PNP epitaxial transistor,It is designed for low frequency application. Since it is a super-thin flat lead type package,a high-density mounting are possible. 1.21±0.1 0.79±0.1 0.25±0.02 ③ JEITA：─ ①：BASE ②：EMITTER ③：COLLECTOR J I H F G 1.21±0.1 0.4 0.8 0.4 FEATURE ● Super-thin flat lead type package. t=0. 5mm ● Excellent linearly of DC forward current gain. ● Low collector to emitter saturation voltage ① ② APPLICATION For hybrid IC,small type machine low frequency voltage amplify application 0.5±0.03 MAXIMUM RATINGS(Ta=25℃) Symbol VCBO VEBO VCEO IC PC Tj Tstg Parameter Collector to Base voltage Emitter to Base voltage Collector to Emitter voltage Collector current Collector dissipation Junction temperature Storage temperature Ratings -60 -6 -50 -150 125（※） 125 -55～125 Unit V V V mA mW ℃ ℃ A ISAHAYA：T-USM TERMINAL CONNECTER MARKING Abbreviation for Kind hFE Item ７ B C D Ｆ E ※package mounted on 9×19×1mm glass-epoxy substrate. A～F running No. G～J Month of manufacture （Ta=25℃） Parameter Collector to Emitter Breakdown voltage Collector cut off current Emitter cut off current DC forward current gain DC forward current gain C to E saturation voltage Symbol V(BR)CEO ICBO IEBO hFE* hFE VCE(sat) fT Cob IC=-100μA, R V V V V CB Test conditions Min BE Limits Min 200 3.0 Min...