CMMT591

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company www.DataSheet4U.com SOT-23 Formed SMD Package CMMT591 SILICON PLANAR EPITAXIAL TRANSISTORS PNP transistor Marking CMMT = 591 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN m m Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS Collector-base voltage (open emitter) Collector-emitter voltage (open base) Emitter-base voltage (open collector) Collector current Peak Pulse current Base current Total power dissipation at Tamb = 25°C Junction temperature D.C. current gain –IC = 500 mA; VCE = 5 V Transition frequency at f = 100 MHz IC = 50 mA; VCE = 10 V VCBO VCEO VEBO IC ICM IB Ptot Tj hFE max. max. max. max. max. max. max. max. min. max. min. 80 60 5 1 2 200 500 150 100 300 150 MHz V V V A A mA mW °C fT Continental Device India Limited Data Sheet Page 1 of 3 www.DataSheet4U.com CMMT591 RATINGS (at TA = 25°C unless otherwise specified) Limiting values Collector-base voltage (open emitter) Collector-emitter voltage (open base) Emitter-base voltage (open collector) Collector current Peak Pulse current Base current Total power dissipation at Tamb = 25°C Storage temperature Junction temperature VCBO VCEO VEBO IC ICM IB Ptot Tstg Tj max. max. max. max. max. max. max. -55 to max. 80 60 5 1 2 200 500 +150 150 V V V A A mA mW °C °C CHARACTERISTICS (at TA = 25°C unless otherwise specified) Collector cut-off current IE = 0; VCB = 60 V ICBO VBE = 0; VCE = 6...