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POWER TRANSISTOR. 2SC1419 Datasheet

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POWER TRANSISTOR. 2SC1419 Datasheet






2SC1419 TRANSISTOR. Datasheet pdf. Equivalent




2SC1419 TRANSISTOR. Datasheet pdf. Equivalent





Part

2SC1419

Description

SILICON POWER TRANSISTOR



Feature


SavantIC Semiconductor www.DataSheet4U.c om Product Specification Silicon NPN Power Transistors 2SC1419 DESCRIPTION ·With TO-220 package ·Large collecto r power dissipation APPLICATIONS ·For medium power amplifier applicattions PI NNING PIN 1 2 3 Base Collector;connecte d to mounting base Emitter Fig.1 simpli fied outline (TO-220) and symbol DESCRI PTION Absolute maxim.
Manufacture

SavantIC

Datasheet
Download 2SC1419 Datasheet


SavantIC 2SC1419

2SC1419; um ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector- base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storag e temperature TC=25 Open emitter Open b ase Open collector CONDITIONS VALUE 50 50 5 2 3 20 150 -55~150 UNIT V V V A A W SavantIC Semico.


SavantIC 2SC1419

nductor www.DataSheet4U.com Product Spe cification Silicon NPN Power Transisto rs CHARACTERISTICS Tj=25 unless otherwi se specified. PARAMETER Collector-emitt er breakdown voltage Collector-base bre akdown voltage Emitter-base breakdown v oltage Collector-emitter saturation vol tage Base-emitter saturation voltage Co llector cut-off current Emitter cut-off current DC curren.


SavantIC 2SC1419

t gain Transition frequency CONDITIONS I C=30mA ,IB=0 IC=1mA ,IE=0 IE=1mA ,IC=0 IC=1A; IB=0.1A IC=1A; IB=0.1A VCB=50V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=4V IC=0.5 A ; VCE=10V 35 MIN 50 50 5 2SC1419 SY MBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE fT TYP. MAX UNI T V V V 1.0 1.5 100 100 320 5 V V µA µA MHz 2 SavantIC Semiconductor ww w.DataSheet4U.com P.

Part

2SC1419

Description

SILICON POWER TRANSISTOR



Feature


SavantIC Semiconductor www.DataSheet4U.c om Product Specification Silicon NPN Power Transistors 2SC1419 DESCRIPTION ·With TO-220 package ·Large collecto r power dissipation APPLICATIONS ·For medium power amplifier applicattions PI NNING PIN 1 2 3 Base Collector;connecte d to mounting base Emitter Fig.1 simpli fied outline (TO-220) and symbol DESCRI PTION Absolute maxim.
Manufacture

SavantIC

Datasheet
Download 2SC1419 Datasheet




 2SC1419
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
DESCRIPTION
·With TO-220 package
·Large collector power dissipation
APPLICATIONS
·For medium power amplifier applicattions
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Product Specification
2SC1419
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
ICM
PC
Tj
Tstg
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Collector power dissipation
Junction temperature
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
50
50
5
2
3
20
150
-55~150
UNIT
V
V
V
A
A
W




 2SC1419
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
Product Specification
2SC1419
CHARACTERISTICS
Tj=25 unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=30mA ,IB=0
50 V
V(BR)CBO Collector-base breakdown voltage
IC=1mA ,IE=0
50 V
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ,IC=0
5V
VCEsat Collector-emitter saturation voltage IC=1A; IB=0.1A
1.0 V
VBEsat
Base-emitter saturation voltage
IC=1A; IB=0.1A
1.5 V
ICBO Collector cut-off current
VCB=50V; IE=0
100 µA
IEBO Emitter cut-off current
VEB=5V; IC=0
100 µA
hFE DC current gain
IC=1A ; VCE=4V
35 320
fT Transition frequency
IC=0.5A ; VCE=10V
5 MHz
2




 2SC1419
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
PACKAGE OUTLINE
Product Specification
2SC1419
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3






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