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POWER TRANSISTOR. 2SC1431 Datasheet

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POWER TRANSISTOR. 2SC1431 Datasheet






2SC1431 TRANSISTOR. Datasheet pdf. Equivalent




2SC1431 TRANSISTOR. Datasheet pdf. Equivalent





Part

2SC1431

Description

SILICON POWER TRANSISTOR



Feature


SavantIC Semiconductor www.DataSheet4U.c om Product Specification Silicon NPN Power Transistors 2SC1431 DESCRIPTION ·With TO-66 package ·Excellent safe operating area APPLICATIONS ·For use i n high frequency power amplifier applic ations. PINNING(see Fig.2) PIN 1 2 3 Ba se Emitter Collector Fig.1 simplified o utline (TO-66) and symbol DESCRIPTION Absolute maximum rati.
Manufacture

SavantIC

Datasheet
Download 2SC1431 Datasheet


SavantIC 2SC1431

2SC1431; ngs(Ta= ) SYMBOL VCBO VCEO VEBO IC PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power d issipation Junction temperature Storage temperature TC=25 Open emitter Open ba se Open collector CONDITIONS VALUE 110 110 5 2 23 150 -55~150 UNIT V V V A W SavantIC Semiconductor www.DataSheet4U. com Product Speci.


SavantIC 2SC1431

fication Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter s ustaining voltage Emitter-base breakdow n voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut- off current DC current gain Transition frequency CONDITIONS IC=50mA ;IB=0 IE=1 mA ;IC=0 IC=1A; IB.


SavantIC 2SC1431

=0.1A IC=1A; IB=0.1A VCB=110V; IE=0 VEB= 5V; IC=0 IC=0.4A ; VCE=2V IC=0.4A ; VCE =10V 50 30 MIN 110 5 2SC1431 SYMBOL V CEO(SUS) V(BR)EBO VCEsat VBE sat ICBO I EBO hFE fT TYP. MAX UNIT V V 1.0 1. 2 10 10 240 V V µA µA MHz 2 Savan tIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Powe r Transistors PACKAGE OUTLINE 2SC1431 Fig.2 outline dimen.

Part

2SC1431

Description

SILICON POWER TRANSISTOR



Feature


SavantIC Semiconductor www.DataSheet4U.c om Product Specification Silicon NPN Power Transistors 2SC1431 DESCRIPTION ·With TO-66 package ·Excellent safe operating area APPLICATIONS ·For use i n high frequency power amplifier applic ations. PINNING(see Fig.2) PIN 1 2 3 Ba se Emitter Collector Fig.1 simplified o utline (TO-66) and symbol DESCRIPTION Absolute maximum rati.
Manufacture

SavantIC

Datasheet
Download 2SC1431 Datasheet




 2SC1431
SavantIC Semiconductor
wSwiwl.iDcatoaSnheeNt4PU.cNomPower Transistors
DESCRIPTION
·With TO-66 package
·Excellent safe operating area
APPLICATIONS
·For use in high frequency power
amplifier applications.
PINNING(see Fig.2)
PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
Product Specification
2SC1431
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
PD
Tj
Tstg
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
110
110
5
2
23
150
-55~150
UNIT
V
V
V
A
W




 2SC1431
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=50mA ;IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=1A; IB=0.1A
VBE sat Base-emitter saturation voltage
IC=1A; IB=0.1A
ICBO Collector cut-off current
VCB=110V; IE=0
IEBO Emitter cut-off current
VEB=5V; IC=0
hFE DC current gain
IC=0.4A ; VCE=2V
fT Transition frequency
IC=0.4A ; VCE=10V
Product Specification
2SC1431
MIN TYP. MAX UNIT
110 V
5V
1.0 V
1.2 V
10 µA
10 µA
50 240
30 MHz
2




 2SC1431
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
PACKAGE OUTLINE
Product Specification
2SC1431
Fig.2 outline dimensions
3






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