C3904

Transistors 2SC3904 www.DataSheet4U.com Silicon NPN epitaxial planar type For 2 GHz band low-noise amplification ■ Features High transition frequency fT Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing 0.40+0.10 –0.05 3 1.50+0.25 –0.05 2.8+0.2 –0.3 Unit: mm 0.16+0.10 –0.06 1 2 (0.65) (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 10˚ ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 15 10 2 65 200 150 −55 to +150 Unit V V V mA mW °C °C 1.1+0.2 –0.1 1.1+0.3 –0.1 1: Base 2: Emitter 3: Collector EIAJ: SC-59 Mini3-G1 Package Marking Symbol: 3S ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector-base cutoff current (Emitter open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Transition frequency Collector output capacitance (Common base, input open circuited) Forward transfer gain Maximum unilateral power gain Noise figure Symbol ICBO IEBO hFE fT Cob S21e2 GUM NF Conditions VCB = 10 V, IE = 0 VEB = 1 V, IC = 0 VCE = 8 V, IC = 20 mA VCE = 8 V, IC = 20 mA, f = 0.8 GHz VCB = 10 V, IE = 0, f = 1 MHz VCE = 8 V, IC = 20 mA, f = 1.5 GHz VCE = 8 V, IC = 20 mA, f = 1.5 GHz VCE = 8 V, IC = 7 mA, f = 1.5 GHz 7 50 7.0 120 8.5...