ZXTP5401G

www.DataSheet4U.com ZXTP5401G 150V, SOT223, PNP High voltage transistor Summary BVCEO > -150V BVEBO > -5V IC(cont) = -600mA PD = 2W Complementary part number ZXTN5551G Description A high voltage PNP transistor in a surface mount package C Features 150V rating SOT223 package B E Applications High voltage amplification E C Tape width (mm) 12 12 Quantity per reel 1000 4000 Ordering information Device ZXTP5401GTA ZXTP5401GTC Reel size (inches) 7 13 C B Pinout - top view Device marking ZXTP 5401 Issue 1 - August 2007 © Zetex Semiconductors plc 2007 1 www.zetex.com www.DataSheet4U.com ZXTP5401G Absolute maximum ratings Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Continuous collector current(a) Peak collector current Power dissipation at TA =25°C(a) Linear derating factor Operating and storage temperature range Tj, Tstg Symbol VCBO VCEO VEBO IC IC PD Limit -160 -150 -5 -600 -2 2 16 -55 to 150 Unit V V V mA A W mW/°C °C Thermal resistance Parameter Junction to ambient(a) Symbol R⍜JA Limit 62.5 Unit °C/W NOTES: (a) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 1oz weight copper, in still air conditions. Issue 1 - August 2007 © Zetex Semiconductors plc 2007 2 www.zetex.com www.DataSheet4U.com ZXTP5401G Typical characteristics Issue 1 - August 2007 © Zetex Semiconductors plc 2007 3 www.zetex.com www.DataSheet4U.com ZXTP5401G Electrical characteristics (at Tamb = 25°C ...