ZXTP5401Z

www.DataSheet4U.com ZXTP5401Z 150V, SOT89, PNP High voltage transistor Summary BVCEO > -150V BVEBO > -5V IC(cont) = -600mA PD = 1.2W Complementary part number ZXTN5551Z Description A high voltage PNP transistor in a small outline surface mount package. C Features 150V rating SOT89 package B Applications High voltage amplification E E Ordering information Device ZXTP5401ZTA Reel size (inches) 7 Tape width (mm) 12 Quantity per reel 1000 C C B Pinout - top view Device marking P01 Issue 1 - August 2007 © Zetex Semiconductors plc 2007 1 www.zetex.com www.DataSheet4U.com ZXTP5401Z Absolute maximum ratings Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Continuous collector current(a) Pulsed collector current Power dissipation at TA = 25°C(a) Linear derating factor Operating and storage temperature range Tj, Tstg Symbol VCBO VCEO VEBO IC ICM PD Limit -160 -150 -5 -600 -2 1.2 9.6 -55 to 150 Unit V V V mA A W mW/°C °C Thermal resistance Parameter Junction to ambient(a) Symbol R⍜JA Limit Unit °C/W NOTES: (a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz weight copper, in still air conditions. Issue 1 - August 2007 © Zetex Semiconductors plc 2007 2 www.zetex.com www.DataSheet4U.com ZXTP5401Z Typical characteristics Issue 1 - August 2007 © Zetex Semiconductors plc 2007 3 www.zetex.com www.DataSheet4U.com ZXTP5401Z Electrical characteristics (at Tamb = 25°C unless oth...