2SK3635

DATA SHEET MOS FIELD EFFECT TRANSISTOR www.DataSheet4U.com 2SK3635 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3635 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter. ORDERING INFORMATION PART NUMBER 2SK3635 2SK3635-Z PACKAGE TO-251 (MP-3) TO-252 (MP-3Z) FEATURES High voltage: VDSS = 200 V Gate voltage rating: ±30 V Low on-state resistance RDS(on) = 0.43 Ω MAX. (VGS = 10 V, ID = 4.0 A) Low Ciss: Ciss = 390 pF TYP. Built-in gate protection diode TO-251/TO-252 package Avalanche capability rated (TO-251) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg 200 ±30 ±8.0 ±24 24 1.0 150 –55 to +150 8 6.4 8 2.4 V V A A W W °C °C A mJ A mJ (TO-252) Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy Note2 Note2 Note3 Note3 IAS EAS IAR EAR Repetitive Avalanche Current Repetitive Avalanche Energy Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 100 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 µH 3. Tch ≤ 125°C, RG = 25 Ω, VDD = 100 V The information in this document is subject to change without notice. Before using this document, please confirm that this...