2SK3639

DATA SHEET MOS FIELD EFFECT TRANSISTOR www.DataSheet4U.com 2SK3639 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3639 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. ORDERING INFORMATION PART NUMBER 2SK3639-ZK PACKAGE TO-252 (MP-3ZK) (TO-252) FEATURES Low on-state resistance RDS(on)1 = 5.5 mΩ MAX. (VGS = 10 V, ID = 32 A) RDS(on)2 = 8.5 mΩ MAX. (VGS = 4.5 V, ID = 32 A) Low Ciss: Ciss = 2400 pF TYP. ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg 20 ±20 ±64 ±256 40 1.0 150 −55 to +150 V V A A W W °C °C Total Power Dissipation (TC = 25°C) Total Power Dissipation Channel Temperature Storage Temperature Note PW ≤ 10 µs, Duty Cycle ≤ 1% The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D15967EJ3V0DS00 (3rd edition) Date Published January 2005 NS CP(K) Printed in Japan The mark shows major revised points. 2002 2SK3639 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARA...