EN29F080

EN29F080 www.DataSheet4U.com EN29F080 8 Megabit (1024K x 8-bit) Flash Memory FEATURES 5.0V ± 10%, single power supply operation - Minimizes system level power requirements Manufactured on 0.35 µm process technology High performance - Access times as fast as 45 ns Low power consumption 25 mA typical active read current 30 mA typical program/erase current 1 µA typical standby current (standard access time to active mode) Flexible Sector Architecture: 16 uniform sectors of 64Kbytes each Supports full chip erase Individual sector erase supported Group sector protection: Hardware method of locking of sector groups to prevent any program or erase operations within that sector group Additionally, temporary Sector Group Unprotect allows code changes in previously locked sectors High performance program/erase speed Byte program time: 10µs typical Sector erase time: 500ms typical Chip erase time: 16s typical Low Standby Current - 1µA CMOS standby current-typical - 1mA TTL standby current Low Power Active Current - 30mA active read current - 30mA program/erase current JEDEC Standard program and erase commands JEDEC standard DATA polling and toggle bits feature Sector Unprotect Mode Embedded Erase and Program Algorithms Erase Suspend / Resume modes: Read and program another Sector during Erase Suspend Mode 0.35 µm double-metal double-poly triple-well CMOS Flash Technology Low Vcc write inhibit < 3.2V >100K program/erase endurance cycle Ready/Busy# outpu...