FDB15N50

SMD Type www.DataSheet4U.com MOSFET N-Channel SMPS Power MOSFET KDB15N50(FDB15N50) Features Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and High Reapplied dv/dt Ruggedness +0.2 8.7-0.2 +0.1 1.27-0.1 TO-263 +0.1 1.27-0.1 +0.2 4.57-0.2 Unit: mm Reduced Miller Capacitance and Low Input Capacitance Improved Switching Speed with Low EMI +0.1 1.27-0.1 0.1max +0.1 0.81-0.1 +0.2 5.28-0.2 2.54 5.08 +0.1 -0.1 +0.2 2.54-0.2 +0.2 15.25-0.2 +0.2 2.54-0.2 0.4 +0.2 -0.2 Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current TC=25 Symbol VDSS VGSS ID Idp PD RèJA Tch Tstg Rating 500 30 15 60 300 2 62 175 -55 to +175 Unit V V A A W W/ /W Drain current-pulsed Power dissipation Derate above 25 Thermal Resistance Junction to Ambient Channel temperature Storage temperature 5.60 1 Gate 2 Drain 3 Source Reduced rDS(ON) www.kexin.com.cn 1 SMD Type www.DataSheet4U.com MOSFET KDB15N50(FDB15N50) Electrical Characteristics Ta = 25 Parameter Drain to source breakdown voltage Drain cut-off current Gate leakage current Gate threshold voltage Drain to source on-state resistance Input capacitance Output capacitance Reverse transfer capacitance Forward Transconductance Total Gate Charge at 10V Gate to Source Gate Charge Gate to Drain "Miller" Charge Turn-on delay time Rise time Turn-off delay time Fall time Reverse Recovery Time Reverse Recovered Charge Continuous Source Current Pulsed Source Current1 Sy...