Document
DCR1840Y85
Phase Control Thyristor Preliminary Information
DS5767-1.2 MAY 2005 (LN23936)
FEATURES
• • Double Side Cooling High Surge Capability
KEY PARAMETERS VDRM IT(AV) ITSM dV/dt* dI/dt 8500V 1840A 25000A 1500V/µs 300A/µs
APPLICATIONS
• • • High Power Drives High Voltage Power Supplies Static Switches
* Higher dV/dt selections available
VOLTAGE RATINGS
Part and Ordering Number Repetitive Peak Voltages VDRM and VRRM V 8500 8000 7500 7000 Conditions
DCR1840Y85 DCR1840Y80 DCR1840Y75 DCR2220Y70
Tvj = -40° C to 125° C, IDRM = IRRM = 300mA, VDRM, VRRM tp = 10ms, VDSM & VRSM = VDRM & VRRM + 100V respectively
Lower voltage grades available.
ORDERING INFORMATION
When ordering, select the required part number shown in the Voltage Ratings selection table. For example:
Outline type code: Y
DCR1840Y85
(See Package Details for further information) Note: Please use the complete part number when ordering and quote this number in any future correspondence relating to your order.
Fig. 1 Package outline
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DCR1840Y85
SEMICONDUCTOR
CURRENT RATINGS
Tcase = 60° C unless stated otherwise
Symbol Double Side Cooled IT(AV) IT(RMS) IT
Parameter
Test Conditions
Max.
Units
Mean on-state current RMS value Continuous (direct) on-state current
Half wave resistive load -
1840 2890 2770
A A A
SURGE RATINGS
Symbol ITSM It
2
Parameter Surge (non-repetitive) on-state current I t for fusing
2
Test Conditions 10ms half sine, Tcase = 125° C VR = 0
Max. 25.0 3.125
Units kA MA s
2
THERMAL AND MECHANICAL RATINGS
Symbol Rth(j-c) Parameter Thermal resistance – junction to case Test Conditions Double side cooled Single side cooled DC Anode DC Cathode DC Rth(c-h) Thermal resistance – case to heatsink Clamping force 54.0kN (with mounting compound) Tvj Virtual junction temperature On-state (conducting) Reverse (blocking) Tstg Fm Storage temperature range Clamping force Double side Single side Min. -55 48 Max. 0.00835 0.0134 0.023 0.002 0.004 135 125 125 59 Units ° C/W ° C/W ° C/W ° C/W ° C/W °C °C °C kN
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DCR1840Y85
SEMICONDUCTOR
DYNAMIC CHARACTERISTICS
Symbol IRRM/IDRM dV/dt dI/dt
Parameter Peak reverse and off-state current Max. linear rate of rise of off-state voltage Rate of rise of on-state current
Test Conditions At VRRM/VDRM, Tcase = 125° C To 67% VDRM, Tj = 125° C, gate open From 67% VDRM to 2x IT(AV) Gate source 30V, 10Ω, tr < 0.5µs, Tj = 125° C
Repetitive 50Hz Non-repetitive
Min. -
Max. 300 1500 150 300
Units mA V/µs A/µs A/µs
VT(TO)
Threshold voltage – Low level Threshold voltage – High level
100A to1000A at Tcase = 125° C 1000A to 7200A at Tcase = 125° C 100A to 1000A at Tcase = 125° C 1000A to 7200A at Tcase = 125° C VD = 67% VDRM, gate source 30V, 10Ω tr = 0.5µs, Tj = 25° C
TBD
0.9 1.3 0.888 0.55 TBD
V V mΩ mΩ µs
rT
On-state slope resistance – Low level On-state slope resistance – High level
tgd
Delay time
tq
Turn-off time
Tj = 125° C, V R = 200V, dI/dt = 1A/µs, dVDR/dt = 20V/µs linear
-
1200
µs
QS IL IH
Stored charge Latching current Holding current
IT = 2000A, Tj = 125° C, dI/dt – 1A/µs, Tj = 25° C, V D = 5V Tj = 25° C, R G-K = ∞, ITM = 500A, IT = 5A
4800 TBD TBD
8000 TBD TBD
µC mA mA
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DCR1840Y85
SEMICONDUCTOR
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol VGT VGD IGT IGD
Parameter Gate trigger voltage Gate non-trigger voltage Gate trigger current Gate non-trigger current
Test Conditions VDRM = 5V, Tcase = 25° C At VDRM, Tcase = 125° C VDRM = 5V, Tcase = 25° C VDRM = 5V, Tcase = 25° C
Max. 1.5 TBD 250 TBD
Units V V mA mA
CURVES
7000
Instantaneous on-state current IT - (A)
6000 5000 4000 3000 2000 1000 0 0.0
min 125° C max 125° C min 25° C max 25° C
2.0
4.0
6.0
Instantaneous on-state voltage VT - (V)
Fig.2 Maximum & minimum on-state characteristics
VTM EQUATION VTM = A + Bln (IT) + C.IT+D.√IT
Where
A = 0.398265 B = 0.121095 C = 0.000524 D = -0.000007 these values are valid for Tj = 125° C for I T 500A to 7200A
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DCR1840Y85
SEMICONDUCTOR
10 9
130 120 180 120 90 60 30
Maximum case temperature, T case ( oC )
2500
110 100 90 80 70 60 50 40 30 20 10 0
Mean power dissipation - (kW)
8 7 6 5 4 3 2 1 0 0 500 1000 1500 2000
180 120 90 60 30
0
500
1000
1500
2000
2500
Mean on-state current, IT(AV) - (A)
Fig.3 On-state power dissipation – sine wave
Mean on-state current, IT(AV) - (A)
Fig.4 Maximum permissible case temperature, double side cooled – sine wave
130
Maximum heatsink temperature, T Heatsink - ( C )
12
180 120 90 60 30
o
120 110 100 90 80 70 60 50 40 30 20 10 0 0 500 1000 1500
11 10
Mean power dissipation - (kW)
9 8 7 6 5 4 3 2 1 d.c. 180 120 90 60 30
2000
2500
0 0 500 1000 1500 2000 2500 3000 3500
Mean on-state current, IT(AV) - (A) Mean on-state current, IT(AV) - (A) Fig.5 Maximum permissible heatsink temperature, double side cooled – sine wave Fig.6 On-state power .