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DCR2630Y52 Dataheets PDF



Part Number DCR2630Y52
Manufacturers Dynex Semiconductor
Logo Dynex Semiconductor
Description Phase Control Thyristor
Datasheet DCR2630Y52 DatasheetDCR2630Y52 Datasheet (PDF)

DCR1840Y85 Phase Control Thyristor Preliminary Information DS5767-1.2 MAY 2005 (LN23936) FEATURES • • Double Side Cooling High Surge Capability KEY PARAMETERS VDRM IT(AV) ITSM dV/dt* dI/dt 8500V 1840A 25000A 1500V/µs 300A/µs APPLICATIONS • • • High Power Drives High Voltage Power Supplies Static Switches * Higher dV/dt selections available VOLTAGE RATINGS Part and Ordering Number Repetitive Peak Voltages VDRM and VRRM V 8500 8000 7500 7000 Conditions DCR1840Y85 DCR1840Y80 DCR1840Y75 DCR222.

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DCR1840Y85 Phase Control Thyristor Preliminary Information DS5767-1.2 MAY 2005 (LN23936) FEATURES • • Double Side Cooling High Surge Capability KEY PARAMETERS VDRM IT(AV) ITSM dV/dt* dI/dt 8500V 1840A 25000A 1500V/µs 300A/µs APPLICATIONS • • • High Power Drives High Voltage Power Supplies Static Switches * Higher dV/dt selections available VOLTAGE RATINGS Part and Ordering Number Repetitive Peak Voltages VDRM and VRRM V 8500 8000 7500 7000 Conditions DCR1840Y85 DCR1840Y80 DCR1840Y75 DCR2220Y70 Tvj = -40° C to 125° C, IDRM = IRRM = 300mA, VDRM, VRRM tp = 10ms, VDSM & VRSM = VDRM & VRRM + 100V respectively Lower voltage grades available. ORDERING INFORMATION When ordering, select the required part number shown in the Voltage Ratings selection table. For example: Outline type code: Y DCR1840Y85 (See Package Details for further information) Note: Please use the complete part number when ordering and quote this number in any future correspondence relating to your order. Fig. 1 Package outline www.DataSheet4U.com 1/9 www.dynexsemi.com DCR1840Y85 SEMICONDUCTOR CURRENT RATINGS Tcase = 60° C unless stated otherwise Symbol Double Side Cooled IT(AV) IT(RMS) IT Parameter Test Conditions Max. Units Mean on-state current RMS value Continuous (direct) on-state current Half wave resistive load - 1840 2890 2770 A A A SURGE RATINGS Symbol ITSM It 2 Parameter Surge (non-repetitive) on-state current I t for fusing 2 Test Conditions 10ms half sine, Tcase = 125° C VR = 0 Max. 25.0 3.125 Units kA MA s 2 THERMAL AND MECHANICAL RATINGS Symbol Rth(j-c) Parameter Thermal resistance – junction to case Test Conditions Double side cooled Single side cooled DC Anode DC Cathode DC Rth(c-h) Thermal resistance – case to heatsink Clamping force 54.0kN (with mounting compound) Tvj Virtual junction temperature On-state (conducting) Reverse (blocking) Tstg Fm Storage temperature range Clamping force Double side Single side Min. -55 48 Max. 0.00835 0.0134 0.023 0.002 0.004 135 125 125 59 Units ° C/W ° C/W ° C/W ° C/W ° C/W °C °C °C kN www.DataSheet4U.com 2/9 www.dynexsemi.com DCR1840Y85 SEMICONDUCTOR DYNAMIC CHARACTERISTICS Symbol IRRM/IDRM dV/dt dI/dt Parameter Peak reverse and off-state current Max. linear rate of rise of off-state voltage Rate of rise of on-state current Test Conditions At VRRM/VDRM, Tcase = 125° C To 67% VDRM, Tj = 125° C, gate open From 67% VDRM to 2x IT(AV) Gate source 30V, 10Ω, tr < 0.5µs, Tj = 125° C Repetitive 50Hz Non-repetitive Min. - Max. 300 1500 150 300 Units mA V/µs A/µs A/µs VT(TO) Threshold voltage – Low level Threshold voltage – High level 100A to1000A at Tcase = 125° C 1000A to 7200A at Tcase = 125° C 100A to 1000A at Tcase = 125° C 1000A to 7200A at Tcase = 125° C VD = 67% VDRM, gate source 30V, 10Ω tr = 0.5µs, Tj = 25° C TBD 0.9 1.3 0.888 0.55 TBD V V mΩ mΩ µs rT On-state slope resistance – Low level On-state slope resistance – High level tgd Delay time tq Turn-off time Tj = 125° C, V R = 200V, dI/dt = 1A/µs, dVDR/dt = 20V/µs linear - 1200 µs QS IL IH Stored charge Latching current Holding current IT = 2000A, Tj = 125° C, dI/dt – 1A/µs, Tj = 25° C, V D = 5V Tj = 25° C, R G-K = ∞, ITM = 500A, IT = 5A 4800 TBD TBD 8000 TBD TBD µC mA mA www.DataSheet4U.com 3/9 www.dynexsemi.com DCR1840Y85 SEMICONDUCTOR GATE TRIGGER CHARACTERISTICS AND RATINGS Symbol VGT VGD IGT IGD Parameter Gate trigger voltage Gate non-trigger voltage Gate trigger current Gate non-trigger current Test Conditions VDRM = 5V, Tcase = 25° C At VDRM, Tcase = 125° C VDRM = 5V, Tcase = 25° C VDRM = 5V, Tcase = 25° C Max. 1.5 TBD 250 TBD Units V V mA mA CURVES 7000 Instantaneous on-state current IT - (A) 6000 5000 4000 3000 2000 1000 0 0.0 min 125° C max 125° C min 25° C max 25° C 2.0 4.0 6.0 Instantaneous on-state voltage VT - (V) Fig.2 Maximum & minimum on-state characteristics VTM EQUATION VTM = A + Bln (IT) + C.IT+D.√IT Where A = 0.398265 B = 0.121095 C = 0.000524 D = -0.000007 these values are valid for Tj = 125° C for I T 500A to 7200A www.DataSheet4U.com 4/9 www.dynexsemi.com DCR1840Y85 SEMICONDUCTOR 10 9 130 120 180 120 90 60 30 Maximum case temperature, T case ( oC ) 2500 110 100 90 80 70 60 50 40 30 20 10 0 Mean power dissipation - (kW) 8 7 6 5 4 3 2 1 0 0 500 1000 1500 2000 180 120 90 60 30 0 500 1000 1500 2000 2500 Mean on-state current, IT(AV) - (A) Fig.3 On-state power dissipation – sine wave Mean on-state current, IT(AV) - (A) Fig.4 Maximum permissible case temperature, double side cooled – sine wave 130 Maximum heatsink temperature, T Heatsink - ( C ) 12 180 120 90 60 30 o 120 110 100 90 80 70 60 50 40 30 20 10 0 0 500 1000 1500 11 10 Mean power dissipation - (kW) 9 8 7 6 5 4 3 2 1 d.c. 180 120 90 60 30 2000 2500 0 0 500 1000 1500 2000 2500 3000 3500 Mean on-state current, IT(AV) - (A) Mean on-state current, IT(AV) - (A) Fig.5 Maximum permissible heatsink temperature, double side cooled – sine wave Fig.6 On-state power .


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