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POWER TRANSISTOR. 2SC1501 Datasheet

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POWER TRANSISTOR. 2SC1501 Datasheet






2SC1501 TRANSISTOR. Datasheet pdf. Equivalent




2SC1501 TRANSISTOR. Datasheet pdf. Equivalent





Part

2SC1501

Description

SILICON POWER TRANSISTOR



Feature


SavantIC Semiconductor www.DataSheet4U.c om Product Specification Silicon NPN Power Transistors 2SC1501 DESCRIPTION ·With TO-126 package ·High breakdown voltage ·Large power dissipation APPL ICATIONS ·For medium power amplifier a pplications PINNING PIN 1 2 3 DESCRIPTI ON Emitter Collector Base Absolute max imum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg.
Manufacture

SavantIC

Datasheet
Download 2SC1501 Datasheet


SavantIC 2SC1501

2SC1501; PARAMETER Collector-base voltage Collec tor-emitter voltage Emitter-base voltag e Collector current Collector current-p eak Collector power dissipation Junctio n temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 300 300 5 0.1 0.15 10 150 -55~150 UNIT V V V A A W SavantIC Semiconductor www.DataSheet4U.com Prod uct Specification .


SavantIC 2SC1501

Silicon NPN Power Transistors CHARACTER ISTICS Tj=25 unless otherwise specified PARAMETER Collector-base breakdown vol tage Collector-emitter breakdown voltag e Emitter-base breakdown voltage Collec tor-emitter saturation voltage Base-emi tter on voltage DC current gain DC curr ent gain Collector cut-off current Outp ut capacitance Transition frequency CON DITIONS IC=100µA;I.


SavantIC 2SC1501

E=0 IC=1mA; IB=0 IE=100µA; IC=0 IC=100m A IB=10m A IC=50mA ; VCE=10V IC=10mA ; VCE=10V IC=50mA ; VCE=10V VCB=300V ; IE =0 IE=0; VCB=30V;f=1MHz IE=20mA ; VCB=3 0V 30 30 MIN 300 300 5 2SC1501 SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO VCEsat VBE hFE-1 hFE-2 ICBO COB fT TYP. MAX UNI T V V V 5.0 1.2 V V 200 100 8 55 µA pF MHz hFE-2 classifications P 30-60 Q 50-100 R 80-150 S .

Part

2SC1501

Description

SILICON POWER TRANSISTOR



Feature


SavantIC Semiconductor www.DataSheet4U.c om Product Specification Silicon NPN Power Transistors 2SC1501 DESCRIPTION ·With TO-126 package ·High breakdown voltage ·Large power dissipation APPL ICATIONS ·For medium power amplifier a pplications PINNING PIN 1 2 3 DESCRIPTI ON Emitter Collector Base Absolute max imum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg.
Manufacture

SavantIC

Datasheet
Download 2SC1501 Datasheet




 2SC1501
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
DESCRIPTION
·With TO-126 package
·High breakdown voltage
·Large power dissipation
APPLICATIONS
·For medium power amplifier applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector
Base
Product Specification
2SC1501
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
VCBO
VCEO
Collector-base voltage
Collector-emitter voltage
VEBO
IC
ICM
PC
Tj
Emitter-base voltage
Collector current
Collector current-peak
Collector power dissipation
Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
300
300
5
0.1
0.15
10
150
-55~150
UNIT
V
V
V
A
A
W




 2SC1501
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CBO Collector-base breakdown voltage
IC=100µA;IE=0
V(BR)CEO Collector-emitter breakdown voltage IC=1mA; IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=100µA; IC=0
VCEsat Collector-emitter saturation voltage IC=100mA IB=10m A
VBE Base-emitter on voltage
IC=50mA ; VCE=10V
hFE-1
DC current gain
IC=10mA ; VCE=10V
hFE-2
DC current gain
IC=50mA ; VCE=10V
ICBO Collector cut-off current
VCB=300V ; IE=0
COB Output capacitance
IE=0; VCB=30V;f=1MHz
fT Transition frequency
IE=20mA ; VCB=30V
Product Specification
2SC1501
MIN TYP. MAX UNIT
300 V
300 V
5V
5.0 V
1.2 V
30
30 200
100 µA
8 pF
55 MHz
hFE-2 classifications
PQR
S
30-60 50-100 80-150 100-200
2




 2SC1501
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
PACKAGE OUTLINE
Product Specification
2SC1501
Fig.2 outline dimensions
3



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