POWER TRANSISTOR. 2SC1504 Datasheet

2SC1504 TRANSISTOR. Datasheet pdf. Equivalent

Part 2SC1504
Description SILICON POWER TRANSISTOR
Feature SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors 2S.
Manufacture SavantIC
Datasheet
Download 2SC1504 Datasheet



2SC1504
SavantIC Semiconductor
wSwiwl.iDcatoaSnheeNt4PU.cNomPower Transistors
Product Specification
2SC1504
DESCRIPTION
With TO-66 package
·Continuous collector current-IC=2A
·Power dissipation -PD=40W @TC=25
APPLICATIONS
·High speed switching and linear amplification
·Switching regulators ,converters
PINNING (See Fig.2)
PIN
DESCRIPTION
1 Base
2 Emitter
3 Collector
·
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
VCEO
Collector-base voltage
Collector-emitter voltage
VEBO
IC
ICM
IB
Emitter-base voltage
Collector current
Collector current-Peak
Base current
PT Total power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
400
300
6
2
5
1
40
200
-65~200
UNIT
V
V
V
A
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-C
Thermal resistance junction to case
MAX
5.0
UNIT
/W



2SC1504
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
Product Specification
2SC1504
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ; IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ; IC=0
VCEsat Collector-emitter saturation voltage IC=1A; IB=0.1A
VBEsat
Base-emitter saturation voltage
IC=1A ;IB=0.1A
ICBO Collector cut-off current
VCB=400V; IE=0
IEBO Emitter cut-off current
VEB=6V; IC=0
hFE DC current gain
IC=1A ; VCE=4V
fT Transition frequency
IC=0.1A ; VCE=10V
300 V
6V
1.0 V
1.5 V
0.1 mA
0.1 mA
20
10 MHz
2





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