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SDR1183 Dataheets PDF



Part Number SDR1183
Manufacturers Solid States Devices
Logo Solid States Devices
Description (SDR1183 - SDR1190) 35 Amp 50-600 Volt 5 nsec STANDARD RECOVERY RECTIFIER
Datasheet SDR1183 DatasheetSDR1183 Datasheet (PDF)

SDR1183 Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 www.DataSheet4U.com Phone: (562) 404-4474 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com Thru SDR1190 35 Amp 50-600 Volt 5 μsec STANDARD RECOVERY RECTIFIER Features: • • • • • • • • • • Low Reverse Leakage Current Single Chip Construction PIV to 600V Hermetically Sealed Low Thermal Resistance Higher Voltage Devices Up to 1400V Available* Fast and Ultra Fast Recovery Versions Available* For Reverse Pola.

  SDR1183   SDR1183


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SDR1183 Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 www.DataSheet4U.com Phone: (562) 404-4474 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com Thru SDR1190 35 Amp 50-600 Volt 5 μsec STANDARD RECOVERY RECTIFIER Features: • • • • • • • • • • Low Reverse Leakage Current Single Chip Construction PIV to 600V Hermetically Sealed Low Thermal Resistance Higher Voltage Devices Up to 1400V Available* Fast and Ultra Fast Recovery Versions Available* For Reverse Polarity Add Suffix “R” Replacement for 1N1183, 1N1184, 1N1185, 1N1186, 1N1187, 1N1188, 1N1189, and 1N1190 TX, TXV, and S-Level Screening Available 2/ Part Number/Ordering Information 1/ SDR11 __ __ Designer’s Data Sheet │ │ └ Screening 2/ __ = Not Screened │ │ TX = TX Level │ │ TXV = TXV Level │ │ S = S Level │ │ │ └ Pin Configuration __ = Normal (Cathode to Stud) │ (See Table 1) R = Reverse (Anode to Stud) │ └ Family/Voltage 83 = 50V 84 = 100V 85 = 150V 86 = 200V 87 = 300V 88 = 400V 89 = 500V 90 = 600V *Contact Factory Maximum Ratings SDR1183 SDR1184 SDR1185 SDR1186 SDR1187 SDR1188 SDR1189 SDR1190 Symbol Value 50 100 150 200 300 400 500 600 35 500 -65 to +150 1.0 DO-5: Units Peak Repetitive Reverse and DC Blocking Voltage VRRM VRWM VR Volts Average Rectified Forward Current (Resistive Load, 60 Hz Sine Wave, TA = 25 °C) Peak Surge Current (8.3 ms Pulse, Half Sine Wave, TA = 25 °C) Operating & Storage Temperature Maximum Total Thermal Resistance Junction to Case Io IFSM TOP & TSTG RθJC Amps Amps ºC ºC/W Notes: 1/ For ordering information, price, operating curves, and availability- contact factory. 2/ Screening based on MIL-PRF-19500. Screening flows available on request. NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: R00005B DOC SDR1183 Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 www.DataSheet4U.com Phone: (562) 404-4474 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com Thru SDR1190 Symbol VF VF IR IR tRR CJ Electrical Characteristics Instantaneous Forward Voltage Drop (IF = 35 Adc, TA = 25 ºC, 300μs pulse) Instantaneous Forward Voltage Drop (IF = 35 Adc, TA = -55 ºC, 300μs pulse) Reverse Leakage Current (Rated VR, TA = 25 ºC, 300μs pulse minimum) Reverse Leakage Current (Rated VR, TA = 100 ºC, 300μs pulse minimum) Reverse Recovery Time (IF = 500 mA, IR = 1 Amp, IRR = 250 mA, TA = 25 ºC) Junction Capacitance (VR = 10VDC, TA = 25ºC, f = 1MHz) Table 1- PIN ASSIGNMENT Code __ R Configuration Normal Reverse Terminal Anode Cathode Max 1.4 Units VDC VDC μA mA μsec pF 1.6 20 2 5 250 Stud Cathode Anode DO-5 Outline (Normal Pin Configuration Shown): NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: R00005B DOC .


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