W16NB60 Datasheet: STW16NB60





W16NB60 STW16NB60 Datasheet

Part Number W16NB60
Description STW16NB60
Manufacture STMicroelectronics
Total Page 8 Pages
PDF Download Download W16NB60 Datasheet PDF

Features: www.DataSheet4U.com STW16NB60 N-CHANNEL 600V - 0.3Ω - 16A TO-247 PowerMesh MOSFET TYPE STW16NB60 s s s s s VDSS 600V RDS(on) < 0.35 Ω ID 16 A TYP ICAL RDS(on) = 0.3Ω EXTREMELY HIGH dv /dt CAPABILITY 100% AVALANCHE TESTED VE RY LOW INTRINSIC CAPACITANCES GATE CHAR GE MINIMIZED 1 3 2 DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has design ed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled wit h the Company’s proprieraty edge term ination structure, gives the lowest RDS (on) per area, exceptional avalanche an d dv/dt capabilities and unrivalled gat e charge and switching characteristics. TO-247 INTERNAL SCHEMATIC DIAGRAM A PPLICATIONS SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING E QUIPMENT AND UNINTERRUPTIBLE POWER SUPP LIES AND MOTOR DRIVE s ABSOLUTE MAXIMU M RATINGS Symbol VDS VDGR VGS ID ID IDM ( ) PTOT dv/dt(1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-g.

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STW16NB60
N-CHANNEL 600V - 0.3- 16A TO-247
PowerMesh™ MOSFET
TYPE
VDSS
RDS(on)
ID
STW16NB60
600V < 0.35 16 A
s TYPICAL RDS(on) = 0.3
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performances. The new patent pending strip layout
coupled with the Company’s proprieraty edge termi-
nation structure, gives the lowest RDS(on) per area,
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteris-
tics.
3
2
1
TO-247
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s SWITCH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID Drain Current (continuos) at TC = 25°C
ID Drain Current (continuos) at TC = 100°C
IDM ( ) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
April 2003
Value
600
600
±30
16
10
64
220
1.76
4
–65 to 150
150
Unit
V
V
V
A
A
A
W
W/°C
V/ns
°C
°C
(1)ISD 16A, di/dt 100A/µs, VDD V(BR)DSS, Tj TJMAX.
1/8

                    
  






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