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POWER TRANSISTOR. 2SC1586 Datasheet

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POWER TRANSISTOR. 2SC1586 Datasheet






2SC1586 TRANSISTOR. Datasheet pdf. Equivalent




2SC1586 TRANSISTOR. Datasheet pdf. Equivalent





Part

2SC1586

Description

SILICON POWER TRANSISTOR



Feature


SavantIC Semiconductor www.DataSheet4U.c om Product Specification Silicon NPN Power Transistors 2SC1586 DESCRIPTION ·With TO-3 package ·High power dissi pation ·High current capability APPLIC ATIONS ·For audio power amplifier and general purpose applications PINNING(se e Fig.2) PIN 1 2 3 Base Emitter Collect or Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Ab.
Manufacture

SavantIC

Datasheet
Download 2SC1586 Datasheet


SavantIC 2SC1586

2SC1586; solute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER C ollector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power d issipation Junction temperature Storage temperature TC=25 CONDITIONS Open emit ter Open base Open collector VALUE 250 200 6 15 4 150 150 -55~150 UNIT V V V A A W SavantIC Sem.


SavantIC 2SC1586

iconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transi stors CHARACTERISTICS Tj=25 unless othe rwise specified PARAMETER Collector-emi tter breakdown voltage Emitter-base bre akdown voltage Collector-emitter satura tion voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Collector output capacitance CONDIT.


SavantIC 2SC1586

IONS IC=25mA ;IB=0 IE=1mA ;IC=0 IC=5A; I B=0.5A VCB=250V; IE=0 VEB=6V; IC=0 IC=5 A ; VCE=4V IC=1A ; VCE=12V IE=0 ; VCB= 10V; f=1MHz 110 60 MIN 200 6 2SC1586 SYMBOL V(BR)CEO V(BR)EBO VCEsat ICBO IE BO hFE fT COB TYP. MAX UNIT V V 2.0 0.1 0.1 V mA mA 10 MHz pF 2 Savan tIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Powe r Transistors PACK.

Part

2SC1586

Description

SILICON POWER TRANSISTOR



Feature


SavantIC Semiconductor www.DataSheet4U.c om Product Specification Silicon NPN Power Transistors 2SC1586 DESCRIPTION ·With TO-3 package ·High power dissi pation ·High current capability APPLIC ATIONS ·For audio power amplifier and general purpose applications PINNING(se e Fig.2) PIN 1 2 3 Base Emitter Collect or Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Ab.
Manufacture

SavantIC

Datasheet
Download 2SC1586 Datasheet




 2SC1586
SavantIC Semiconductor
wSwiwl.iDcatoaSnheeNt4PU.cNomPower Transistors
DESCRIPTION
·With TO-3 package
·High power dissipation
·High current capability
APPLICATIONS
·For audio power amplifier and general
purpose applications
PINNING(see Fig.2)
PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
Product Specification
2SC1586
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
VCBO
VCEO
Collector-base voltage
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current
IB Base current
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
250
200
6
15
4
150
150
-55~150
UNIT
V
V
V
A
A
W




 2SC1586
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
Product Specification
2SC1586
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=25mA ;IB=0
200
V
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ;IC=0
6
V
VCEsat Collector-emitter saturation voltage IC=5A; IB=0.5A
2.0 V
ICBO Collector cut-off current
VCB=250V; IE=0
0.1 mA
IEBO Emitter cut-off current
VEB=6V; IC=0
0.1 mA
hFE DC current gain
IC=5A ; VCE=4V
60
fT Transition frequency
IC=1A ; VCE=12V
10 MHz
COB Collector output capacitance
IE=0 ; VCB= 10V; f=1MHz
110
pF
2




 2SC1586
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
PACKAGE OUTLINE
Product Specification
2SC1586
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3



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